2N7002 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

N Channel Small Signal MOSFET
100mA
2N7002
SOT-23
1 Gate
2 Source
3 Drain
DRIVES SWITCHS, RELAYS, SOLENOIDS,
LAMPS, DISPLAYS, ETC.
LOW OFFSET VOLTAGE
LOW VOLTAGE OPERATION
EASILY DRIVEN WITHOUT BUFFER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ta=25
PARAMETERS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate Threshhold Voltage
Drain-Source On-Resistance
Drain-Source On-Voltage
On-State Drain Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V(BR)DSS
IDSS
IGSSF
VGS(th)
RDS(on)
V DS(on)
Id(on)
Ciss
Coss
Crss
ton
toff
Pc
Tj
Tstg
MIN MAX
60
1.0
1.0
-10
0.8 3.0
7.5
7.5
2.5
0.45
75
60
25
5
10
10
0.35
125
-55 125
UNIT
Vdc
uA
mA
nA
V
Ohm
Ohm
V
mA
pF
pF
pF
nS
nS
W
CONDITION
VGS=0, ID=10uA
VDS=48V, VGS=0
VDS=48V, VGS=0, Tj=125
VGSF=15V, VDS=0
VDS=VGS, ID=1.0A
VGS=10V, ID=0.5A
VGS=4.5V, ID=75mA
VGS=10V, ID=0.5A
VGS=4.5V, ID=75mA
VGS=4.5V, VDS=10V
VDS=25V, VGS=0, f=1 MHz
VDS=25V, VGS=0, f=1 MHz
VDS=25V, VGS=0, f=1 MHz
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: [phone] FAX: [phone]