SPF-3043 Datasheet, PDF (1/3 Pages) Stanford Microdevices – Low Noise pHEMT GaAs FET

Product Description
Stanford Microdevices’ SPF-3043 is a high performance
0.25µm pHEMT Gallium Arsenide FET. This 300µm device is
ideally biased at 3V,20mA for lowest noise performance and
battery powered requirements. At 5V,40mA the device
delivers excellent OIP3 of 32dBm. It provides ideal
performance as a driver stage in many commercial and
industrial LNA applications.
PPrerelilmimininaaryry
SPF-3043
Low Noise pHEMT GaAs FET
Qualification Pending April 2001
35
30
25
20
15
10
5
0
Typical Gain Performance
3V,20mA
5V,40mA
Gain
Gmax
2
4
6
8
10
Frequency (GHz)
Product Features
• DC-10 GHz Operation
• Ultra Low NF:
0.25 dB @ 1 GHz
0.50 dB @ 2 GHz
• High Assoc. Gain: 25 dB @ 1 GHz
22 dB @ 2 GHz
• Low Current Draw for NFopt (3V,20mA)
• +32 dBm OIP3, +20 dBm P1dB (5V,40mA)
• Low Cost High Performance pHEMT
Applications
• LNA for Wireless Infrastructure
• Fixed Wireless Infrastructure
• Wireless Data
• Driver Stage for Low Power Applications
Symbol
G_MAX
S₂₁
NF_min
P1dB
OIP₃
V_P
I_DSS
g_mp
BV_GSO
Device Characteristics, T = 25ºC
V_DS=3V, I_DS=20mA (unless otherwise noted)
Maximum Available Gain
Z_S=Z_S*, Z_L=Z_L*
f = 0.9 GHz
f = 1.9 GHz
Insertion Gain
Z_S=Z_L=50Ω
f = 0.9 GHz
f = 1.9 GHz
Minimum Noise Figure
Z_S=Γ_OPT, Z_L=Z_L*
f = 0.9 GHz
f = 1.9 GHz
Output 1 dB compression point
Z_S=Z_SOPT, Z_L=Z_LOPT
V_DS=3V, I_DS=20 mA
V_DS=5V, I_DS=40 mA
Output Third Order Intercept Point
Z_S=Z_SOPT, Z_L=Z_LOPT
V_DS=3V, I_DS=20 mA
V_DS=5V, I_DS=40 mA
Pinchoff Voltage
V_DS= 2V, I_DS= 0.1 mA
Saturated Drain Current
V_DS= 2V, V_GS = 0V
Peak Transconductance
V_DS= 2V, V_GS @ g_mp
Gate-to-Source Breakdown Voltage
I_G= 0.03 mA
Drain Open, Source Grounded
BV_GDO Gate-to-Drain Breakdown Voltage
I_G= 0.03 mA
Source Open, Drain Grounded
Rth Thermal Resistance (junction to lead)
Units
dB
dB
dB
dBm
dBm
V
mA
mS
V
V
ºC/W
Min.
-1.1
45
100
Typ.
25.5
22.4
18.5
18.0
0.25
0.50
15.5
20
29
32
-0.8
67.5
150
-10
-10
150
Max.
-0.5
100
-8
-8
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
1
EDS-101772 Rev. A