SNA-676 Datasheet, PDF (1/3 Pages) Stanford Microdevices – DC-6.5 GHZ , CASCADABLE GAAS MMIC AMPLIFIER

Product Description
Stanford Microdevices’ SNA-676 is a high-performance
GaAs Heterojunction Bipolar Transistor (MMIC) housed in a
low-cost surface mountable stripline package. A Darlington
configuration is utilized for broadband performance to 6.5
GHz.
These unconditionally stable amplifiers provide 11dB of gain
and +18dBm of P1dB when biased at 5.7V and 70mA. This
MMIC requires only a single suply voltage. The use of an
external resistor allows for bias flexibility and stability.
Also available in chip form (SNA-600), its small size (0.4mm
x 0.4mm) and gold metallization make it an ideal choice for
use in hybrid circuits.
The SNA-676 is available in tape and reel at 1000, 3000 and
5000 devices per reel.
Output Power vs. Frequency
22
20
18
dBm
16
14
12
0.1 1
2
3
4
5
6
7
8
GHz
SNA-676
DC-6.5 GHz, Cascadable
GaAs MMIC Amplifier
Product Features
• Cascadable 50 Ohm Gain Block
• 11dB Gain, +18dBm P1dB
• High Linearity, +36dBm TOIP Typ.
• 1.5:1 Input and Output VSWR
• Operates From a Single DC Supply
• Low Cost Stripline Mount Ceramic Package
Applications
• Narrow and Broadband Linear Amplifiers
• Commercial and Industrial Applications
Electrical Specifications at Ta = 25C
Sym bol
G
P
P a ra m e te rs : Te s t C o n d itio n s:
Id = 7 0 m A , Z = 5 0 O h m s
0
S m a ll S ig n a l G a in
f = 0 .1 -4 .0 G H z
f = 4 .0 -6 .5 G H z
U n its
dB
dB
M in .
9 .0
8 .0
Typ .
11 .0
9 .0
M ax.
B W 3 d B 3 d B B a n d w id th
GHz
6 .5
P
1dB
O u tp u t P o w e r a t 1 d B C o m p re ss io n
f = 0 .1 -2 .0 G H z
f = 2 .0 -6 .5 G H z
dBm
1 8 .0
1 6 .0
NF
N o is e F ig u re
f = 0 .1 -4 .0 G H z
7 .5
dB
f = 4 .0 -6 .5 G H z
8 .5
VSW R
In p u t / O u tp u t
f = 0 .1 -6 .5 G H z
1 .5 :1
IP
3
T
D
IS O L
T h ird O rd e r In te rc e p t P o in t
G ro u p D e la y
R e v e rs e Is o la tio n
f = 0 .1 -2 .0 G H z
f = 2 .0 G H z
f = 0 .1 -6 .5 G H z
dBm
psec
dB
3 6 .0
120
1 7 .0
VD
D e v ic e V o lta g e
V
4 .8
5 .7
6 .8
d G /d T
d V /d T
D e v ic e G a in Te m p e ra tu re C o e ffic ie n t
D e v ic e V o lta g e Te m p e ra tu re C o e ffic ie n t
d B /d e g C
m V /d e g C
-0 .0 0 2 3
-5 .0
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-89