SHF-0186 Datasheet, PDF (1/4 Pages) Stanford Microdevices – DC-12 GHz, 0.5 Watt AlGaAs/GaAs HFET

Product Description
Stanford Microdevices’ SHF-0186 is a high performance GaAs
Heterostructure FET housed in a low-cost surface-mount plastic
package. HFET technology improves breakdown voltage while
minimizing Schottky leakage current for higher power added
efficiency and improved linearity.
PPrerelilmimininaaryry
SHF-0186
DC-12 GHz, 0.5 Watt
AlGaAs/GaAs HFET
Output power at 1dB compression for the SHF-0186 is +28
dBm when biased for Class AB operation at 8V and 100mA.
The +40 dBm third order intercept makes it ideal for high dynamic
range, high intercept point requirements. It is well suited for
use in both analog and digital wireless communication
infrastructure and subscriber equipment including cellular PCS,
CDPD, wireless data, and pagers.
Gain vs. Frequency
40
V_DS=8V, I_DQ=100mA
30
20
Gmax
10
S21
0
Product Features
• Patented AlGaAs/GaAs Heterostructure FET
Technology
• +28 dBm P1dB Typical
• +40 dBm Output IP3 Typical
• High Drain Efficiency: Up to 46% at Class AB
• 17 dB Gain at 900 MHz (Application circuit)
• 15 dB Gain at 1900 MHz (Application circuit)
• Gmax Guaranteed at 12 GHz
-10
0
2 4 6 8 10 12
Frequency (GHz)
Applications
• Analog and Digital Wireless System
• Cellular PCS, CDPD, Wireless Data, Pagers
• AN-020 Contains detailed application circuits
Symbol
Device Characteristics, T = 25ºC
V_DS = 8V, I_DQ = 100 mA
Units
Min.
Typ.
Max.
G_MAX Maximum Available Gain
S₂₁
Insertion Power Gain
S
Gain
21
P1dB Output 1 dB compression point
OIP₃
I
DSS
g_m
V_P
V_bgs
V_bgd
Rth
Output Third Order Intercept Point
Saturated Drain Current
V_DS = 3V, V_GS = 0V
Transconductance
V_DS = 3V, V_GS = 0V
Pinch-Off Voltage
V_DS = 3V, I_DQ = 1mA
Gate-to-Source Breakdown Voltage, Igs = 1.2mA
Gate-to-Drain Breakdown Voltage, Igd = 1.2mA
Thermal Resistance (junction to lead)
f = 900 MHz, Z_S=Z_S*, Z_L=Z_L*
f = 1960 MHz, Z_S=Z_S*, Z_L=Z_L*
f = 12000 MHz, Z_S=Z_S*, Z_L=Z_L*
f = 900 MHz, Z_S=Z_L= 50 Ohms
f = 1960 MHz, Z_S=Z_L= 50 Ohms
f = 900 MHz, Z_S=Z_SOPT, Z_L=Z_LOPT
f = 1960 MHz, Z_S=Z_SOPT, Z_L=Z_LOPT
f = 900 MHz, Z_S=Z_SOPT, Z_L=Z_LOPT
f = 1960 MHz, Z_S=Z_SOPT, Z_L=Z_LOPT
f = 900 MHz, Z_S=Z_SOPT, Z_L=Z_LOPT
f = 1960 MHz, Z_S=Z_SOPT, Z_L=Z_LOPT
23.4
dB
20.1
4.0
5.0
dB
18.0
13.7
15.2
dB
17.9
14.6
dBm
28.0
28.8
dBm
40.9
40.4
mA
300
mS
175
V
-2.7
-1.9
-1.0
V
V
ºC/W
-20
-17
-20
-17
66
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
1
EDS-101574 Rev A