SGA-7489 Datasheet, PDF (1/8 Pages) Stanford Microdevices – DC-3000 MHZ SILICON GERMANIUM

Product Description
Stanford Microdevices’ SGA-7489 is a high performance
cascadeable 50-ohm amplifier designed for operation at 5
Volts DC. This RFIC uses the latest Silicon Germanium
Heterostructure Bipolar Transistor (SiGe HBT) process
featuring 1 micron emitters with FT up to 50 GHz.
Preliminary
SGA-7489
DC-3000 MHz Silicon Germanium
HBT Cascadeable Gain Block
This circuit uses a darlington pair topology with resistive
feedback for broadband performance as well as stability
over its entire temperature range. Internally matched to
50 ohm impedance, the SGA-7489 requires only DC blocking
and bypass capacitors and a bias inductor for external
components. Frequency performance may be extended using
the 2 GHz application circuit shown on sheet 5.
S21 vs. Frequency, T=+25C, I_d=130 mA
25
20
Product Features
• DC-3000 MHz Operation
• Single Voltage Supply
• High Output Intercept: +36 dBm typ. at 850 MHz
• Low Noise Figure: 2.9 dB typ. at 850 MHz
15
Applications
10
• Oscillator Amplifiers
5
• PA for Low / Medium Power Applications
• IF/ RF Buffer Amplifier
0
0
• _{500 1000 1500 2000 2500 3000} Drivers for CATV Amplifiers
Frequency (MHz)
• LO Driver Amplifier
Symbol
Parameters: Test Conditions:
Z₀ = 50 Ohms, I_D = 130 mA, T = 25^oC
P_1dB
Output Power at 1dB Compression
f = 100 MHz
f = 500 MHz
f = 850 MHz
f = 1950 MHz *
Units
dBm
dBm
dBm
dBm
Min.
Typ.
22.8
22.6
22.4
20.3*
Max.
Notes
* Using
2 GHz
App.Ckt.
(sheet 5)
IP₃
Third Order Intercept Point
Power out per tone = 0 dBm
f = 100 MHz
f = 500 MHz
f = 850 MHz
f = 1950 MHz *
dBm
dBm
dBm
dBm
38.6
37.2
36.0
35.7*
* Using
2 GHz
App.Ckt.
(sheet 5)
S₂₁
Small Signal Gain
f = 100 MHz
dB
f = 500 MHz
dB
f = 850 MHz
dB
f = 1950 MHz *
dB
23.7
23.0
22.0
18.3*
* Using
2 GHz
App.Ckt.
(sheet 5)
Bandwidth
S₁₁
S₂₂
(Determined by S₁₁, S₂₂ Values)
Input Return Loss
Output Return Loss
S₁₂
Reverse Isolation
f = DC-3000 MHz
f = DC-3000 MHz
f = 100 MHz
f = 500 MHz
f = 850 MHz
f = 1950 MHz *
MHz
dB
dB
dB
dB
dB
dB
3000
11.8
9.3
25.8
25.8
25.4
22.7*
* Using
2 GHz
App.Ckt.
(sheet 5)
NF
Noise Figure, Z_S = 50 Ohms
f = 850 MHz
dB
2.9
V_D
Rth,j-l
Device Voltage
Thermal Resistance (junction - lead)
V
5.0
o _C/W
82
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
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EDS-101801 Rev A