SCA-7 Datasheet, PDF (1/3 Pages) Stanford Microdevices – DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier

Product Description
Stanford Microdevices’ SCA-7 is a high performance Gallium
Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration is utilized for broadband perfor-
mance up to 3 GHz. The heterojunction increases break-
down voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products.
Typical IP3 at 40mA is +24dBm.
SCA-7
DC-3 GHz, Cascadable
GaAs HBT MMIC Amplifier
These unconditionally stable amplifiers provides 21dB of gain
and +12dBm of 1dB compressed power and requires only a
single positive voltage supply. Only 2 DC-blocking capacitors,
a bias resistor and an optional inductor are needed for
operation.
Product Features
This MMIC is an ideal choice for wireless applications such
as cellular, PCS, CDPD, wireless data and SONET.
Output IP3 vs. Frequency
30
28
26
dBm
24
22
20
0.1
1
2
3
GHz
Electrical Specifications at Ta = 25C
• High Output IP3 : +24dBm
• High Gain : Up to 21dB
• Cascadable 50 Ohm : 1.5:1 VSWR
• Patented GaAs HBT Technology
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• Cellular, PCS, CDPD
• Wireless Data, SONET
Sym bol
P a ra m e te rs : Te s t C o n d itio n s:
Id = 4 0 m A , Z = 5 0 O h m s
0
G
P o w e r G a in
P
G a in F la tn e ss
G_F
G a in F la tn e ss o ve r a n y 1 0 0 M H z b a n d
f = 0 .1-2.0 G H z
f = 2 .0-3.0 G H z
f = 0 .1-2.0 G H z
U n its
dB
dB
dB
dB
M in .
Ty p .
M ax.
18
20
18
+ /- 1.2
+ /- 0.1
P
1dB
NF
O u tp u t P o w e r a t 1 d B C o m p re ssio n :
N o ise F ig u re
f = 0 .1-2.0 G H z
f = 0 .1-3.0 G H z
dBm
dB
1 2 .0
3 .8
T h ird O rd e r In te rce p t P o in t
IP ₃
O u tp u t To n e @ 0 d B m 1 0 M H z A p a rt
f = 0 .1-2.0 G H z
dBm
2 3 .0
2 4 .0
T
D
IS O L
G ro u p D e la y
R e ve rs e Iso la tio n
f = 1 .9 G H z
f = 0 .1-3.0 G H z
psec
dB
100
22
VD
D e vice Vo lta g e
V
3 .5
4 .0
4 .5
d G /d T D e v ic e G a in Te m p e ra tu re C o e ffic ie n t
dB /de gC
-0.00 3
d V /d T D e v ic e Vo lta g e Te m p e ra tu re C o e ffic ie n t
m V /deg C
-4 .0
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
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