SCA-16 Datasheet, PDF (1/3 Pages) Stanford Microdevices – DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier

Product Description
Stanford Microdevices’ SCA-16 is a high performance Gallium
Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier.
A Darlington configuration is utilized for broadband
performance up to 3 GHz. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products.
Typical IP3 at 50mA is +28dBm.
SCA-16
DC-3 GHz, Cascadable
GaAs HBT MMIC Amplifier
These unconditionally stable amplifiers provides 15dB of gain
and +14.5dBm of 1dB compressed power and requires only
a single positive voltage supply. Only 2 DC-blocking capaci-
tors, a bias resistor and an optional inductor are needed for
operation.
This MMIC is an ideal choice for wireless applications such
as cellular, PCS, CDPD, wireless data and SONET.
Output IP3 vs. Frequency
32
30
28
dBm
26
24
22
0.1
1
2
3
GHz
Product Features
• High Output IP3 : +28dBm
• Flat Gain : +/- 0.7dB Over Full Band
• Cascadable 50 Ohm : 1.5:1 VSWR
• Patented GaAsHBT Technology
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• Cellular, PCS, CDPD
• Wireless Data, SONET
Electrical Specifications at Ta = 25C
Sym bol
G
P
G
F
P a ra m e te rs : Te s t C o n d itio n s:
Id = 5 0 m A , Z = 5 0 O h m s
0
P o w e r G a in
G a in F la tn e s s
G a in F la tn e s s o v e r a n y 1 0 0 M H z b a n d
f = 0 .1 -2 .0 G H z
f = 2 .0 -3 .0 G H z
f = 0 .1 -2 .0 G H z
U n its
dB
dB
dB
dB
M in .
13
Typ .
15
14
+ /- 0 .7
+ /- 0 .1
M ax.
P
1dB
NF
O u tp u t P o w e r a t 1 d B C o m p re ss io n
N o is e F ig u re
f = 0 .1 -2 .0 G H z
f = 0 .1 -3 .0 G H z
dBm
dB
1 4 .5
5 .5
V S W R In p u t a n d O u tp u t V S W R
f = 0 .1 -3 .0 G H z
-
1 .5
T h ird O rd e r In te rc e p t P o in t
IP
3
O u tp u t To n e @ 0 d B m 1 0 M H z A p a rt
f = 0 .1 -2 .0 G H z
dBm
2 8 .0
T
D
IS O L
G ro u p D e la y
R e v e rs e Is o la tio n
f = 1 .9 G H z
f = 0 .1 -3 .0 G H z
psec
dB
100
20
VD
D e v ic e V o lta g e
V
3 .5
4 .0
4 .5
d G /d T D e v ic e G a in Te m p e ra tu re C o e ffic ie n t
d B /d e g C
-0 .0 0 1 8
d V /d T D e v ic e V o lta g e Te m p e ra tu re C o e ffic ie n t
m V /d e g C
-4 .0
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-149