SST26VF016 Datasheet, PDF(32/39 Page) Silicon Storage Technology, Inc

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SST26VF016 Datasheet, PDF (32/39 Pages) Silicon Storage Technology, Inc – Serial Quad I/O (SQI) Flash Memory

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Serial Quad I/O (SQI) Flash Memory

SST26VF016 / SST26VF032

DC Characteristics

Data Sheet

Table 12:DC Operating Characteristics (VDD = 2.7- 3.6V)

Limits

Symbol Parameter

Min Typ Max Units

IDDR

Read Current

IDDW

Program and Erase Cur-

rent

ISB1

Standby Current

ILI

Input Leakage Current

ILO

Output Leakage Current

VIL

Input Low Voltage

VIH

Input High Voltage

0.7

VDD

VOL

Output Low Voltage

VOH

Output High Voltage

VDD-

0.2

ÂµA

0.8

0.2

Test Conditions

VDD=VDD Min,

CE#=0.1 VDD/0.9 VDD@33 MHz,

SO=open

CE#=VDD

CE#=VDD, VIN=VDD or VSS

VIN=GND to VDD, VDD=VDD Max

VOUT=GND to VDD, VDD=VDD Max

VDD=VDD Min

VDD=VDD Max

IOL=100 ÂµA, VDD=VDD Min

IOH=-100 ÂµA, VDD=VDD Min

T12.0 1359

Table 13:Capacitance (TA = 25Â°C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition Maximum

COUT1

Output Pin Capacitance

VOUT = 0V

12 pF

CIN1

Input Capacitance

VIN = 0V

6 pF

T13.0 1359

1. This parameter is measured only for initial qualification and after a design or process change that could affect this

parameter.

Table 14:Reliability Characteristics

Symbol

Parameter

Minimum Specification Units Test Method

NEND1

Endurance

100,000

Cycles JEDEC Standard A117

TDR1

ILTH1

Data Retention

Latch Up

100

100 + IDD

Years JEDEC Standard A103

mA JEDEC Standard 78

T14.0 1359

1. This parameter is measured only for initial qualification and after a design or process change that could affect this

parameter.

S71359-05-000

06/10

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