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SST49LF020A Datasheet, PDF (28/50 Pages) Silicon Storage Technology, Inc – 2 Mbit LPC Flash
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Data Sheet
DC Characteristics
2 Mbit LPC Flash
SST49LF020A
TABLE 12: DC Operating Characteristics (All Interfaces)
Limits
Symbol Parameter
Min
Max Units Test Conditions
IDD1
Active VDD Current
Read
Write
LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT
at f=33 MHz (LPC mode) or 1/TRC min (PP Mode)
All other inputs=VIL or VIH
12
mA All outputs = open, VDD=VDD Max
24
mA See Note2
ISB
Standby VDD Current
(LPC Interface)
IRY3
Ready Mode VDD Current
(LPC Interface)
100
µA LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT
at f=33 MHz (LPC mode) or 1/TRC min (PP Mode)
LFRAME#=0.9 VDD, f=33 MHz, CE#=0.9 VDD,
VDD=VDD Max, All other inputs ≥ 0.9 VDD or ≤ 0.1 VDD
10
mA LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT
at f=33 MHz (LPC mode) or 1/TRC min (PP Mode)
LFRAME#=VIL, f=33 MHz, VDD=VDD Max
All other inputs ≥ 0.9 VDD or ≤ 0.1 VDD
II
Input Current for Mode
and ID[3:0] pins
200
µA VIN=GND to VDD, VDD=VDD Max
ILI
Input Leakage Current
1
µA VIN=GND to VDD, VDD=VDD Max
ILO
Output Leakage Current
1
µA VOUT=GND to VDD, VDD=VDD Max
VIHI
INIT# Input High Voltage
1.1 VDD+0.5 V VDD=VDD Max
VILI
INIT# Input Low Voltage
-0.5
0.4
V VDD=VDD Min
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
-0.5 0.3 VDD V VDD=VDD Min
0.5 VDD VDD+0.5 V VDD=VDD Max
0.1 VDD V IOL=1500 µA, VDD=VDD Min
VOH
Output High Voltage
0.9 VDD
V IOH=-500 µA, VDD=VDD Min
1. IDD active while a Read or Write (Program or Erase) operation is in progress.
2. For PP Mode: OE# = WE# = VIH; For LPC Mode: f = 1/TRC min, LFRAME# = VIH, CE# = VIL.
3. The device is in Ready mode when no activity is on the LPC bus.
T12.2 1206
TABLE 13: Recommended System Power-up Timings
Symbol
Parameter
Minimum
Units
TPU-READ1
TPU-WRITE1
Power-up to Read Operation
Power-up to Write Operation
100
µs
100
µs
T13.0 1206
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter
TABLE 14: Pin Capacitance (VDD=3.3V, Ta=25 °C, f=1 Mhz, other pins open)
Parameter Description
Test Condition
Maximum
CI/O1
CIN1
I/O Pin Capacitance
Input Capacitance
VI/O=0V
VIN=0V
12 pF
12 pF
T14.0 1206
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2006 Silicon Storage Technology, Inc.
28
S71206-08-000
5/06
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