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SST49LF016C Datasheet, PDF (27/37 Pages) Silicon Storage Technology, Inc – 16 Mbit LPC Serial Flash
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16 Mbit LPC Serial Flash
SST49LF016C
DC Characteristics
Data Sheet
TABLE 20: DC Operating Characteristics at 33 MHz and 66 MHz (All Interfaces)
Limits
Symbol Parameter
IDD1
Active VDD Current
Read
Single-/Dual-Byte Program, Erase
Quad-Byte Program
ISB
Standby VDD Current
(LPC Interface)
Min
Max Units
18
mA
40
mA
60
mA
100
µA
IRY2
Ready Mode VDD Current
10
mA
II
ILI
ILO
IH
VH
VIHI3
VILI3
VIL
VIH
VOL
VOH
Input Leakage Current for ID[3:0] pins
200
µA
Input Leakage Current
1
µA
Output Leakage Current
1
µA
Supervoltage Current for WP#/AAI
200
µA
Supervoltage for WP#/AAI
8.5
9.5
V
INIT# Input High Voltage
INIT# Input Low Voltage
1.1 VDD+0.5 V
-0.5
0.4
V
Input Low Voltage
-0.5 0.3 VDD V
Input High Voltage
Output Low Voltage
0.5 VDD VDD+0.5 V
0.1 VDD V
Output High Voltage
0.9 VDD
V
1. IDD active while a Read or Write (Program or Erase) operation is in progress.
2. The device is in Ready mode when no activity is on the LPC bus.
3. Do not violate processor or chipset specification regarding INIT# voltage.
Test Conditions
LCLK (LPC mode)=VILT/VIHT
All other inputs=VIL or VIH
All outputs = open, VDD=VDD Max
LCLK (LPC mode)=VILT/VIHT at
LFRAME#=.9VDD
VDD=VDD Max
All other inputs ≥ 0.9 VDD or ≤ 0.1 VDD
LCLK (LPC mode)=VILT/VIHT
LFRAME#=VIL, VDD=VDD Max
All other inputs ≥ 0.9 VDD or ≤ 0.1 VDD
VIN=GND to VDD, VDD=VDD Max
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Max
VDD=VDD Min
VDD=VDD Min
VDD=VDD Max
IOL=1500 µA, VDD=VDD Min
IOH=-500 µA, VDD=VDD Min
T20.1 1237
TABLE 21: Recommended System Power-up Timings
Symbol
TPU-READ1
TPU-WRITE1
Parameter
Power-up to Read Operation
Power-up to Write Operation
Minimum
100
100
Units
µs
µs
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter
T21.0 1237
TABLE 22: Pin Capacitance (VDD=3.3V, TA=25 °C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
CI/O1
CIN1
LPIN2
I/O Pin Capacitance
Input Capacitance
Pin Inductance
VI/O=0V
VIN=0V
12 pF
12 pF
20 nH
T22.0 1237
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. Refer to PCI spec.
©2006 Silicon Storage Technology, Inc.
27
S71237-07-000
9/06
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