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SST25VF016B_11 Datasheet, PDF (23/31 Pages) Silicon Storage Technology, Inc – 16 Mbit SPI Serial Flash
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A Microchip Technology Company
16 Mbit SPI Serial Flash
SST25VF016B
Data Sheet
Table 10:DC Operating Characteristics
Symbol Parameter
IDDR
Read Current
IDDR2 Read Current
IDDR3 Read Current
IDDW Program and Erase Current
ISB
Standby Current
ILI
Input Leakage Current
ILO
Output Leakage Current
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOL2 Output Low Voltage
VOH
Output High Voltage
Limits
Min Max Units Test Conditions
10
15
20
30
20
1
1
0.8
0.7 VDD
0.2
0.4
VDD-0.2
mA CE#=0.1 VDD/0.9 VDD@25 MHz, SO=open
mA CE#=0.1 VDD/0.9 VDD@50 MHz, SO=open
mA CE#=0.1 VDD/0.9 VDD@80 MHz, SO=open
mA CE#=VDD
µA CE#=VDD, VIN=VDD or VSS
µA VIN=GND to VDD, VDD=VDD Max
µA VOUT=GND to VDD, VDD=VDD Max
V VDD=VDD Min
V VDD=VDD Max
V IOL=100 µA, VDD=VDD Min
V IOL=1.6 mA, VDD=VDD Min
V IOH=-100 µA, VDD=VDD Min
T10.0 1271
Table 11:Recommended System Power-up Timings
Symbol
Parameter
Minimum
Units
TPU-READ1
VDD Min to Read Operation
10
µs
TPU-WRITE1
VDD Min to Write Operation
10
µs
T11.0 1271
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 12:Capacitance (TA = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
COUT1
CIN1
Output Pin Capacitance
Input Capacitance
VOUT = 0V
VIN = 0V
12 pF
6 pF
T12.0 1271
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 13:Reliability Characteristics
Symbol
Parameter
Minimum Specification Units Test Method
NEND1
Endurance
10,000
Cycles JEDEC Standard A117
TDR1
Data Retention
100
Years JEDEC Standard A103
ILTH1
Latch Up
100 + IDD
mA JEDEC Standard 78
T13.0 1271
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
©2011 Silicon Storage Technology, Inc.
23
S71271-04-000
01/11
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