SST39LF200A_10 Datasheet, PDF (13/31 Pages) Silicon Storage Technology, Inc – 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash

2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
AC CHARACTERISTICS
Data Sheet
TABLE 14: Read Cycle Timing Parameters V_DD = 3.0-3.6V
SST39LF200A/400A/800A-55
Symbol Parameter
Min
Max
Units
T_RC
T_CE
T_AA
T_OE
T_CLZ1
T_OLZ1
T_CHZ1
T_OHZ1
T_OH1
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
55
55
55
30
0
0
15
15
0
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
ns
ns
ns
ns
ns
ns
ns
ns
ns
T14.7 1117
TABLE 15: Read Cycle Timing Parameters V_DD = 2.7-3.6V
SST39VF200A/400A/800A-70
Symbol Parameter
Min
Max
Units
T_RC
Read Cycle Time
70
ns
T_CE
Chip Enable Access Time
70
ns
T_AA
Address Access Time
70
ns
T_OE
Output Enable Access Time
35
ns
T_CLZ1 CE# Low to Active Output
0
ns
T_OLZ1 OE# Low to Active Output
0
ns
T_CHZ1 CE# High to High-Z Output
20
ns
T_OHZ1 OE# High to High-Z Output
20
ns
T_OH1
Output Hold from Address Change
0
ns
T15.7 1117
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2010 Silicon Storage Technology, Inc.
13
S71117-12-000
04/10