SST32HF1641 Datasheet, PDF (13/36 Pages) Silicon Storage Technology, Inc – Multi-Purpose Flash Plus + SRAM ComboMemory

Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
AC CHARACTERISTICS
Preliminary Specifications
TABLE 10: SRAM READ CYCLE TIMING PARAMETERS
Symbol Parameter
Min
Max
Units
T_RCS
Read Cycle Time
70
ns
T_AAS
Address Access Time
70
ns
T_BES
Bank Enable Access Time
70
ns
T_OES
Output Enable Access Time
35
ns
T_BYES
T_BLZS1
T_OLZS1
T_BYLZS1
T_BHZS1
T_OHZS1
T_BYHZS1
UBS#, LBS# Access Time
BES# to Active Output
Output Enable to Active Output
UBS#, LBS# to Active Output
BES# to High-Z Output
Output Disable to High-Z Output
UBS#, LBS# to High-Z Output
70
ns
0
ns
0
ns
0
ns
25
ns
0
25
ns
35
ns
T_OHS
Output Hold from Address Change
10
ns
T10.1 1236
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 11: SRAM WRITE CYCLE TIMING PARAMETERS
Symbol
T_WCS
T_BWS
T_AWS
T_ASTS
T_WPS
T_WRS
T_BYWS
T_ODWS
T_OEWS
T_DSS
T_DHS
Parameter
Write Cycle Time
Bank Enable to End-of-Write
Address Valid to End-of-Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
UBS#, LBS# to End-of-Write
Output Disable from WE# Low
Output Enable from WE# High
Data Set-up Time
Data Hold from Write Time
Min
Max
Units
70
ns
60
ns
60
ns
0
ns
60
ns
0
ns
60
ns
30
ns
0
ns
30
ns
0
ns
T11.1 1236
©2005 Silicon Storage Technology, Inc.
13
S71236-04-000
5/05