SST25WF512_10 Datasheet, PDF (13/32 Pages) Silicon Storage Technology, Inc – 512 Kbit / 1 Mbit / 2 Mbit / 4Mbit 1.8V SPI Serial Flash

512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
Data Sheet
Byte-Program
The Byte-Program instruction programs the bits in the
selected byte to the desired data. The selected byte must
be in the erased state (FFH) when initiating a Program
operation. A Byte-Program instruction applied to a pro-
tected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN)
instruction must be executed. CE# must remain active low
for the duration of the Byte-Program instruction. The Byte-
Program instruction is initiated by executing an 8-bit com-
mand, 02H, followed by address bits [A₂₃-A₀]. Following the
address, the data is input in order from MSB (bit 7) to LSB
(bit 0). CE# must be driven high before the instruction is
executed. The user may poll the Busy bit in the software
status register or wait T_BP for the completion of the internal
self-timed Byte-Program operation. See Figure 8 for the
Byte-Program sequence.
CE#
SCK
MODE 3
MODE 0
012 345 6 78
15 16 23 24 31 32 39
SI
02
MSB
SO
FIGURE 8: Byte-Program Sequence
ADD.
ADD.
ADD. D_IN
MSB LSB
HIGH IMPEDANCE
1328 F08.0
©2009 Silicon Storage Technology, Inc.
13
S71328-08-000
11/09