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SST26WF032 Datasheet, PDF (12/36 Pages) Silicon Storage Technology, Inc – 1.8V Serial Quad I/O (SQI) Flash Memory
1.8V Serial Quad I/O (SQI) Flash Memory
SST26WF032
Advance Information
Table 3: Device Operation Instructions for SST26WF032
Instruction
Description
Command Address Dummy
Data
Maximum
Cycle1
Cycle(s)2 Cycle(s) Cycle(s) Frequency
WRDI
Write Disable
04H
0
0
0
RBPR12
Read Block Protec-
72H
0
0
1 to m/4
tion Register
WBPR10,12
Write Block Protec-
42H
0
0
1 to m/4
80 MHz
tion Register
LBPR10
Lock Down Block
8DH
0
0
0
Protection Register
1. One BUS cycle is two clock periods (command, access, or data).
T3.0 1409
2. Address bits above the most significant bit of each density can be VIL or VIH.
3. RST command only executed if RSTEN command is executed first. Any intervening command will disable Reset.
4. Device accepts eight-clock command in SPI mode, or two-clock command in SQI mode.
5. After a power cycle, Read, High-Speed Read, and JEDEC-ID Read instructions input and output cycles are SPI bus
protocol.
6. Burst length– n = 8 Bytes: Data(00H); n = 16 Bytes: Data(01H); n = 32 Bytes: Data(02H); n = 64 Bytes: Data(03H).
7. The Quad J-ID read wraps the three Quad J-ID Bytes of data until terminated by a low-to-high transition on CE#
8. Sector Addresses: Use AMS - A12, remaining address are don’t care, but must be set to VIL or VIH.
9. Blocks are 64 KByte, 32 KByte, or 8KByte, depending on location. Block Erase Address: AMS - A16 for 64 KByte; AMS -
A15 for 32 KByte; AMS - A13 for 8 KByte. Remaining addresses are don’t care, but must be set to VIL or VIH.
10. Requires a prior WREN command.
11. The Read-Status register is continuous with ongoing clock cycles until terminated by a low-to-high transition on CE#.
12. Data is written/read from MSB to LSB. MSB = 79 for SST26WF032.
No Operation (NOP)
The No Operation command only cancels a Reset Enable command. NOP has no impact on any other
command.
©2010 Silicon Storage Technology, Inc.
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