SST29SF020_06 Datasheet, PDF (10/25 Pages) Silicon Storage Technology, Inc – 2 Mbit / 4 Mbit (x8) Small-Sector Flash

Data Sheet
AC CHARACTERISTICS
2 Mbit / 4 Mbit Small-Sector Flash
SST29SF020 / SST29SF040
SST29VF020 / SST29VF040
TABLE 10: Read Cycle Timing Parameters
V_DD = 4.5-5.5V for SST29SF020/040 and 2.7-3.6V for SST29VF020/040
SST29SF020/040-55 SST29VF020/040-70
Symbol Parameter
Min
Max
Min
Max
Units
T_RC
Read Cycle Time
55
70
ns
T_CE
Chip Enable Access Time
55
70
ns
T_AA
Address Access Time
55
70
ns
T_OE
Output Enable Access Time
30
35
ns
T_CLZ1
CE# Low to Active Output
0
T_OLZ1
OE# Low to Active Output
0
0
ns
0
ns
T_CHZ1
CE# High to High-Z Output
20
25
ns
T_OHZ1
T_OH1
OE# High to High-Z Output
Output Hold from Address Change
20
25
ns
0
0
ns
T10.10 1160
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 11: Program/Erase Cycle Timing Parameters
V_DD = 4.5-5.5V for SST29SF020/040 and 2.7-3.6V for SST29VF020/040
Symbol Parameter
Min
Max
Units
T_BP
Byte-Program Time
20
µs
T_AS
Address Setup Time
0
ns
T_AH
Address Hold Time
30
ns
T_CS
WE# and CE# Setup Time
0
ns
T_CH
WE# and CE# Hold Time
0
ns
T_OES
OE# High Setup Time
0
ns
T_OEH
OE# High Hold Time
10
ns
T_CP
CE# Pulse Width
40
ns
T_WP
T_WPH1
WE# Pulse Width
WE# Pulse Width High
40
ns
30
ns
T_CPH1 CE# Pulse Width High
30
ns
T_DS
T_DH1
Data Setup Time
Data Hold Time
40
ns
0
ns
T_IDA1
Software ID Access and Exit Time
150
ns
T_SE
Sector-Erase
25
ms
T_SCE
Chip-Erase
100
ms
T11.9 1160
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2005 Silicon Storage Technology, Inc.
10
S71160-13-000
10/06