SST39VF320 Datasheet, PDF (1/24 Pages) Silicon Storage Technology, Inc – 32 Mbit (x16) Multi-Purpose Flash

32 Mbit (x16) Multi-Purpose Flash
SST39VF320
FEATURES:
SST39VF3202.7V 32Mb (x16) MPF memory
Preliminary Specifications
• Organized as 2M x16
• Single 2.7-3.6V Read and Write Operations
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 µA (typical)
– Auto Low Power Mode: 3 µA (typical)
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Block-Erase Capability
– Uniform 32 KWord blocks
• Fast Read Access Time
– 70 ns
– 90 ns
• Latched Address and Data
• Fast Erase and Word-Program
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 µs (typical)
– Chip Rewrite Time:
15 seconds (typical)
• Automatic Write Timing
– Internal V_PP Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (6mm x 8mm)
PRODUCT DESCRIPTION
The SST39VF320 devices are 2M x16 CMOS Multi-Pur-
pose Flash (MPF) manufactured with SST's proprietary,
high performance CMOS SuperFlash technology. The
split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The SST39VF320 write (Program or
Erase) with a 2.7-3.6V power supply.
Featuring high performance Word-Program, the
SST39VF320 devices provide a typical Word-Program
time of 7 µsec. The devices use Toggle Bit or Data# Polling
to indicate the completion of Program operation. To protect
against inadvertent write, these devices have on-chip hard-
ware and software data protection schemes. Designed,
manufactured, and tested for a wide spectrum of applica-
tions, the SST39VF320 are offered with a guaranteed typi-
cal endurance of 100,000 cycles. Data retention is rated at
greater than 100 years.
The SST39VF320 devices are suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applications,
the SST39VF320 significantly improve performance and
reliability, while lowering power consumption. The
SST39VF320 inherently use less energy during Erase and
Program than alternative flash technologies. The total
energy consumed is a function of the applied voltage, cur-
rent, and time of application. Since for any given voltage
range, the SuperFlash technology uses less current to pro-
gram and has a shorter erase time, the total energy con-
sumed during any Erase or Program operation is less than
alternative flash technologies. The devices also improve
flexibility while lowering the cost for program, data, and con-
figuration storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST39VF320 is offered in 48-lead TSOP and 48-ball
TFBGA packages. See Figures 1 and 2 for pinouts.
Device Operation
Commands are used to initiate the memory operation func-
tions of the device. Commands are written to the device
using standard microprocessor write sequences. A com-
mand is written by asserting WE# low while keeping CE#
low. The address bus is latched on the falling edge of WE#
or CE#, whichever occurs last. The data bus is latched on
the rising edge of WE# or CE#, whichever occurs first.
©2003 Silicon Storage Technology, Inc.
S71143-02-000
11/03
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.