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SST39VF1601_05 Datasheet, PDF (1/32 Pages) Silicon Storage Technology, Inc – 16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus | |||
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16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories
FEATURES:
Data Sheet
⢠Organized as 1M x16: SST39VF1601/1602
2M x16: SST39VF3201/3202
4M x16: SST39VF6401/6402
⢠Single Voltage Read and Write Operations
â 2.7-3.6V
⢠Superior Reliability
â Endurance: 100,000 Cycles (Typical)
â Greater than 100 years Data Retention
⢠Low Power Consumption (typical values at 5 MHz)
â Active Current: 9 mA (typical)
â Standby Current: 3 µA (typical)
â Auto Low Power Mode: 3 µA (typical)
⢠Hardware Block-Protection/WP# Input Pin
â Top Block-Protection (top 32 KWord)
for SST39VF1602/3202/6402
â Bottom Block-Protection (bottom 32 KWord)
for SST39VF1601/3201/6401
⢠Sector-Erase Capability
â Uniform 2 KWord sectors
⢠Block-Erase Capability
â Uniform 32 KWord blocks
⢠Chip-Erase Capability
⢠Erase-Suspend/Erase-Resume Capabilities
⢠Hardware Reset Pin (RST#)
⢠Security-ID Feature
â SST: 128 bits; User: 128 bits
⢠Fast Read Access Time:
â 70 ns
â 90 ns
⢠Latched Address and Data
⢠Fast Erase and Word-Program:
â Sector-Erase Time: 18 ms (typical)
â Block-Erase Time: 18 ms (typical)
â Chip-Erase Time: 40 ms (typical)
â Word-Program Time: 7 µs (typical)
⢠Automatic Write Timing
â Internal VPP Generation
⢠End-of-Write Detection
â Toggle Bits
â Data# Polling
⢠CMOS I/O Compatibility
⢠JEDEC Standard
â Flash EEPROM Pinouts and command sets
⢠Packages Available
â 48-lead TSOP (12mm x 20mm)
â 48-ball TFBGA (6mm x 8mm) for 16M and 32M
â 48-ball TFBGA (8mm x 10mm) for 64M
⢠All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST39VF160x/320x/640x devices are 1M x16, 2M
x16, and 4M x16 respectively, CMOS Multi-Purpose
Flash Plus (MPF+) manufactured with SSTâs proprietary,
high performance CMOS SuperFlash technology. The
split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared
with alternate approaches. The SST39VF160x/320x/640x
write (Program or Erase) with a 2.7-3.6V power supply.
These devices conform to JEDEC standard pinouts for
x16 memories.
Featuring high performance Word-Program, the
SST39VF160x/320x/640x devices provide a typical Word-
Program time of 7 µsec. These devices use Toggle Bit or
Data# Polling to indicate the completion of Program opera-
tion. To protect against inadvertent write, they have on-chip
hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed
typical endurance of 100,000 cycles. Data retention is rated
at greater than 100 years.
©2005 Silicon Storage Technology, Inc.
S71223-04-000
11/05
1
The SST39VF160x/320x/640x devices are suited for appli-
cations that require convenient and economical updating of
program, configuration, or data memory. For all system
applications, they significantly improve performance and
reliability, while lowering power consumption. They inher-
ently use less energy during Erase and Program than alter-
native flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of applica-
tion. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or
Program operation is less than alternative flash technolo-
gies. These devices also improve flexibility while lowering
the cost for program, data, and configuration storage appli-
cations.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
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