SST32HF324C Datasheet, PDF (1/28 Pages) Silicon Storage Technology, Inc – Multi-Purpose Flash Plus + SRAM ComboMemory

Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF324C
FEATURES:
SST32HF324C32Mb Flash + 4Mb SRAM
(x16) MCP ComboMemories
Preliminary Specifications
• ComboMemory organized as:
– 2M x16 Flash + 256K x16 SRAM
• Single 2.7-3.3V Read and Write Operations
• Concurrent Operation
– Read from or Write to SRAM while
Erase/Program Flash
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Current: 15 mA (typical) for
Flash or SRAM Read
– Standby Current: 12 µA (typical)
• Flexible Erase Capability
– Uniform 2 KWord sectors
– Uniform 32 KWord size blocks
• Erase-Suspend/Erase-Resume Capabilities
• Security-ID Feature
– User: 128 bits
• Fast Read Access Times:
– Flash: 70 ns
– SRAM: 70 ns
• Latched Address and Data for Flash
• Flash Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 µs (typical)
• Flash Automatic Erase and Program Timing
– Internal V_PP Generation
• Flash End-of-Write Detection
– Toggle Bit
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard Command Set
• Package Available
– 48-ball LBGA (10mm x 12mm x 1.4mm)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST32HF324C ComboMemory devices integrate a
CMOS flash memory bank with a CMOS SRAM mem-
ory bank in a Multi-Chip Package (MCP), manufactured
with SST’s proprietary, high-performance SuperFlash
technology.
Featuring high performance Word-Program, the flash
memory bank provides a maximum Word-Program time of
7 µsec. To protect against inadvertent flash write, the
SST32HF324C devices contain on-chip hardware and
software data protection schemes. The SST32HF324C
devices offer a guaranteed endurance of 10,000 cycles.
Data retention is rated at greater than 100 years.
The SST32HF324C devices consist of two independent
memory banks with respective bank enable signals. The
Flash and SRAM memory banks are superimposed in the
same memory address space. Both memory banks share
common address lines, data lines, WE# and OE#. The
memory bank selection is done by memory bank enable
signals. The SRAM bank enable signal, BES# selects the
SRAM bank. The flash memory bank enable signal, BEF#
selects the flash memory bank. The WE# signal has to be
used with Software Data Protection (SDP) command
sequence when controlling the Erase and Program opera-
tions in the flash memory bank. The SDP command
sequence protects the data stored in the flash memory
bank from accidental alteration.
©2005 Silicon Storage Technology, Inc.
S71267-02-000
9/05
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The SST32HF324C provide the added functionality of
being able to simultaneously read from or write to the
SRAM bank while erasing or programming in the flash
memory bank. The SRAM memory bank can be read or
written while the flash memory bank performs Sector-
Erase, Bank-Erase, or Word-Program concurrently. All
flash memory Erase and Program operations will automati-
cally latch the input address and data signals and complete
the operation in background without further input stimulus
requirement. Once the internally controlled Erase or Pro-
gram cycle in the flash bank has commenced, the SRAM
bank can be accessed for Read or Write.
The SST32HF324C devices are suited for applications that
use both flash memory and SRAM memory to store code
or data. For systems requiring low power and small form
factor, the SST32HF324C devices significantly improve
performance and reliability while lowering power consump-
tion when compared with multiple chip solutions. The
SST32HF324C inherently use less energy during Erase
and Program operations than alternative flash technolo-
gies. The total energy consumed is a function of the
applied voltage, current, and time of application. Since, for
any given voltage range, SuperFlash technology uses less
current to program and has a shorter erase time, the total
energy consumed during any Erase or Program operation
is less than alternative flash technologies.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF+ and ComboMemory are trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.