SST30VR021 Datasheet, PDF (1/12 Pages) Silicon Storage Technology, Inc – 2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo

2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM
ROM/RAM Combo
SST30VR021 / SST30VR022 / SST30VR023
SST30VR021/022/0232 Mb Mask ROM (x8) + 1 Mb / 2Mb / 256 Kb SRAM (x8) Combo
FEATURES:
• ROM + SRAM ROM/RAM Combo
– SST30VR021: 256K x8 ROM + 128K x8 SRAM
– SST30VR022: 256K x8 ROM + 256K x8 SRAM
– SST30VR023: 256K x8 ROM + 32K x8 SRAM
• ROM/RAM combo on a monolithic chip
• Equivalent ComboMemory (Flash + SRAM):
SST31LF021E for code development and
pre-production
• Wide Operating Voltage Range: 2.7-3.3V
• Chip Access Time
– SST30VR022
70 ns
– SST30VR021/023 500 ns
• Low Power Dissipation:
– Standby: 3 µW (Typical)
– Operating: 10 mW (Typical)
• Fully Static Operation
– No clock or refresh required
• Three state Outputs
• Packages Available
– 32-pin TSOP (8mm x14mm)
Data Sheet
PRODUCT DESCRIPTION
The SST30VR021/022/023 are ROM/RAM combo chips
consisting of 2 Mbit Read Only Memory organized as 256
KBytes and Static Random Access Memory organized as
128, 256, and 32 KBytes.
The device is fabricated using SST’s advanced CMOS low
power process technology.
The SST30VR021/022/023 has an output enable input for
precise control of the data outputs. It also has two (2) sepa-
rate chip enable inputs for selection of either RAM or ROM
and for minimizing current drain during power-down mode.
The SST30VR021/022/023 is particularly well suited for
use in low voltage (2.7-3.3V) supplies such as pagers,
organizers and other handheld applications.
FUNCTIONAL BLOCK DIAGRAM
RAMCS#
ROMCS#
OE#
WE#
AMS-A0
RAMCS#
OE#
WE#
RAM
ROMCS#
OE#
ROM
DQ7-DQ0
Note: AMS = Most Significant Address
380 ILL B1.1
©2001 Silicon Storage Technology, Inc.
S71135-02-000 4/01
380
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
ComboMemory is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.