SST29EE010_00 Datasheet, PDF (1/26 Pages) Silicon Storage Technology, Inc – 1 Megabit (128K x8) Page-Mode EEPROM

1 Megabit (128K x8) Page-Mode EEPROM
SST29EE010 / SST29LE010 / SST29VE010
FEATURES:
• Single Voltage Read and Write Operations
– 5.0V-only for the SST29EE010
– 3.0-3.6V for the SST29LE010
– 2.7-3.6V for the SST29VE010
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
– Active Current: 20 mA (typical) for 5V and
10 mA (typical) for 3.0/2.7V
– Standby Current: 10 µA (typical)
• Fast Page-Write Operation
– 128 Bytes per Page, 1024 Pages
– Page-Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 5 sec (typical)
– Effective Byte-Write Cycle Time: 39 µs
(typical)
Data Sheet
• Fast Read Access Time
– 5.0V-only operation: 90 and 120 ns
1
– 3.0-3.6V operation: 150 and 200 ns
– 2.7-3.6V operation: 200 and 250 ns
• Latched Address and Data
2
• Automatic Write Timing
– Internal VPP Generation
• End of Write Detection
3
– Toggle Bit
– Data# Polling
• Hardware and Software Data Protection
4
• TTL I/O Compatibility
• JEDEC Standard
5
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32 Pin PDIP
6
– 32-Pin PLCC
– 32-Pin TSOP (8mm x 20mm, 8mm x 14mm)
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PRODUCT DESCRIPTION
The SST29EE010/29LE010/29VE010 are 128K x8
system applications, the SST29EE010/29LE010/
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CMOS Page-Write EEPROMs manufactured with SST’s ^{29VE010 significantly improve performance and reliabil-}
proprietary, high performance CMOS SuperFlash tech-
nology. The split-gate cell design and thick oxide tunnel-
ity, while lowering power consumption. The
SST29EE010/29LE010/29VE010 improve flexibility
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ing injector attain better reliability and manufacturability ^{while lowering the cost for program, data, and configura-}
compared with alternate approaches. The
SST29EE010/29LE010/29VE010 write with a single
tion storage applications.
To meet high density, surface mount requirements, the
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power supply. Internal Erase/Program is transparent to _{SST29EE010/29LE010/29VE010 are offered in 32-pin}
the user. The SST29EE010/29LE010/29VE010
conform to JEDEC standard pinouts for byte-wide
TSOP (8mm x 20mm and 8mm x 14mm) and 32-lead
PLCC packages. A 600-mil, 32-pin PDIP package is also
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memories.
available. See Figures 1 and 2 for pinouts.
Featuring high performance Page-Write, the
SST29EE010/29LE010/29VE010 provide a typical Byte-
Device Operation
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Write time of 39 µsec. The entire memory, i.e., 128
The SST Page-Mode EEPROM offers in-circuit electrical
KBytes, can be written page-by-page in as little as 5
seconds, when using interface features such as Toggle
write capability. The SST29EE010/29LE010/29VE010
does not require separate Erase and Program opera-
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Bit or Data# Polling to indicate the completion of a Write ^{tions. The internally timed write cycle executes both}
cycle. To protect against inadvertent write, the
SST29EE010/29LE010/29VE010 have on-chip hard-
erase and program transparently to the user. The
SST29EE010/29LE010/29VE010 have industry stan-
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ware and Software Data Protection schemes. Designed, ^{dard optional Software Data Protection, which SST}
manufactured, and tested for a wide spectrum of applica-
tions, the SST29EE010/29LE010/29VE010 are offered
recommends always to be enabled. The SST29EE010/
29LE010/29VE010 are compatible with industry stan-
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with a guaranteed Page-Write endurance of 10⁴ cycles. ^{dard EEPROM pinouts and functionality.}
Data retention is rated at greater than 100 years.
Read
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The SST29EE010/29LE010/29VE010 are suited for ap- _{The Read operations of the SST29EE010/29LE010/}
plications that require convenient and economical updat- _{29VE010 are controlled by CE# and OE#, both have to}
ing of program, configuration, or data memory. For all
be low for the system to obtain data from the outputs.
CE# is used for device selection. When CE# is high, the
© 2000 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
304-3 6/00
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SSF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.