SST25WF512 Datasheet, PDF (1/29 Pages) Silicon Storage Technology, Inc – 512 Kbit / 1 Mbit / 2 Mbit 1.8V SPI Serial Flash

512 Kbit / 1 Mbit / 2 Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020
FEATURES:
SST25VF016B16Mb Serial Peripheral Interface (SPI) flash memory
Advance Information
• Single Voltage Read and Write Operations
– 1.65-1.95V
• Serial Interface Architecture
– SPI Compatible: Mode 0 and Mode 3
• High Speed Clock Frequency
– 40MHz
• Superior Reliability
– Endurance: 100,000 Cycles
– Greater than 100 years Data Retention
• Ultra-Low Power Consumption:
– Active Read Current: 9 mA (typical @ 20MHz)
– Standby Current: 2 µA (typical)
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
– Uniform 64 KByte overlay blocks (2 Mbit only)
• Fast Erase and Byte-Program:
– Chip-Erase Time: 125 ms (typical)
– Sector-/Block-Erase Time: 62ms (typical)
– Byte-Program Time: 50 µS (typical)
• Auto Address Increment (AAI) Programming
– Decrease total chip programming time over
Byte-Program operations
• End-of-Write Detection
– Software polling the BUSY bit in Status Register
– Busy Status readout on SO pin
• Reset Pin (RST#) or Programmable Hold Pin
(HOLD#) option
– Hardware Reset pin as default
– Hold pin option to suspend a serial sequence
without deselecting the device
• Write Protection (WP#)
– Enables/Disables the Lock-Down function of the
status register
• Software Write Protection
– Write protection through Block-Protection bits in
status register
• Temperature Range
– Industrial: -40°C to +85°C
• Packages Available
– 8-lead SOIC (150 mils)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST25WF512/010/020 are members of the Serial
Flash 25 Series family and features a four-wire, SPI-com-
patible interface that allows for a low pin-count package
which occupies less board space and ultimately lowers
total system costs. SST25WF512/010/020 SPI serial flash
memories are manufactured with SST proprietary, high-
performance CMOS SuperFlash technology. The split-gate
cell design and thick-oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches.
The SST25WF512/010/020 devices significantly improve
performance and reliability, while lowering power consump-
tion. The devices write (Program or Erase) with a single
power supply of 1.65-1.95V for SST25WF512/010/020.
The total energy consumed is a function of the applied volt-
age, current, and time of application. Since for any given
voltage range, the SuperFlash technology uses less cur-
rent to program and has a shorter erase time, the total
energy consumed during any Erase or Program operation
is less than alternative flash memory technologies.
The SST25WF512/010/020 devices are offered in an 8-
lead, 150 mils SOIC package. See Figure 2 for the pin
assignment.
©2006 Silicon Storage Technology, Inc.
S71328-01-000
02/07
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.