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SST25VF512_10 Datasheet, PDF (1/23 Pages) Silicon Storage Technology, Inc – 512 Kbit SPI Serial Flash | |||
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512 Kbit SPI Serial Flash
SST25VF512
FEATURES:
SST25VF512512Kb Serial Peripheral Interface (SPI) flash memory
Data Sheet
⢠Single 2.7-3.6V Read and Write Operations
⢠Serial Interface Architecture
â SPI Compatible: Mode 0 and Mode 3
⢠20 MHz Max Clock Frequency
⢠Superior Reliability
â Endurance: 100,000 Cycles (typical)
â Greater than 100 years Data Retention
⢠Low Power Consumption:
â Active Read Current: 7 mA (typical)
â Standby Current: 8 µA (typical)
⢠Flexible Erase Capability
â Uniform 4 KByte sectors
â Uniform 32 KByte overlay blocks
⢠Fast Erase and Byte-Program:
â Chip-Erase Time: 70 ms (typical)
â Sector- or Block-Erase Time: 18 ms (typical)
â Byte-Program Time: 14 µs (typical)
⢠Auto Address Increment (AAI) Programming
â Decrease total chip programming time over
Byte-Program operations
⢠End-of-Write Detection
â Software Status
⢠Hold Pin (HOLD#)
â Suspends a serial sequence to the memory
without deselecting the device
⢠Write Protection (WP#)
â Enables/Disables the Lock-Down function of the
status register
⢠Software Write Protection
â Write protection through Block-Protection bits in
status register
⢠Packages Available
â 8-lead SOIC (4.9mm x 6mm)
â 8-contact WSON
⢠All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
SSTâs serial flash family features a four-wire, SPI-compati-
ble interface that allows for a low pin-count package occu-
pying less board space and ultimately lowering total system
costs. SST25VF512 SPI serial flash memory is manufac-
tured with SSTâs proprietary, high-performance CMOS
SuperFlash technology. The split-gate cell design and
thick-oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
The SST25VF512 device significantly improves perfor-
mance, while lowering power consumption. The total
energy consumed is a function of the applied voltage, cur-
rent, and time of application. Since for any given voltage
range, the SuperFlash technology uses less current to pro-
gram and has a shorter erase time, the total energy con-
sumed during any Erase or Program operation is less than
alternative flash memory technologies. The SST25VF512
device operates with a single 2.7-3.6V power supply.
The SST25VF512 device is offered in both 8-lead SOIC
and 8-contact WSON packages. See Figure 1 for the pin
assignments.
©2005 Silicon Storage Technology, Inc.
S71192-09-000
1/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
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