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SST25VF064C Datasheet, PDF (1/31 Pages) Silicon Storage Technology, Inc – 64 Mbit SPI Serial Dual I/O Flash | |||
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64 Mbit SPI Serial Dual I/O Flash
SST25VF064C
FEATURES:
SST25VF032B32Mb Serial Peripheral Interface (SPI) flash memory
Data Sheet
⢠Single Voltage Read and Write Operations
â 2.7-3.6V
⢠Serial Interface Architecture
â SPI Compatible: Mode 0 and Mode 3
⢠Dual Input/Output Support
â Fast-Read Dual-Output Instruction
â Fast-Read Dual I/O Instruction
⢠High Speed Clock Frequency
â 80 MHz for High-Speed Read (0BH)
â 75 MHz for Fast-Read Dual-Output (3BH)
â 50 MHz for Fast-Read Dual I/O (BBH)
â 33 MHz for Read Instruction (03H)
⢠Superior Reliability
â Endurance: 100,000 Cycles (typical)
â Greater than 100 years Data Retention
⢠Low Power Consumption
â Active Read Current: 12 mA (typical @ 80 MHz) for
single-bit read)
â Active Read Current: 14 mA (typical @ 75MHz) for
dual-bit read)
â Standby Current: 5 µA (typical)
⢠Flexible Erase Capability
â Uniform 4 KByte sectors
â Uniform 32 KByte overlay blocks
â Uniform 64 KByte overlay blocks
⢠Fast Erase
â Chip-Erase Time: 35 ms (typical)
â Sector-/Block-Erase Time: 18 ms (typical)
⢠Page-Program
â 256 Bytes per page
â Single and Dual Input support
â Fast Page-Program time in 1.5 ms (typical)
⢠End-of-Write Detection
â Software polling the BUSY bit in Status Register
⢠Write Protection (WP#)
â Enables/Disables the Lock-Down function of the
status register
⢠Software Write Protection
â Write protection through Block-Protection bits in sta-
tus register
⢠Security ID
â One-Time Programmable (OTP) 256 bit, Secure ID
- 64 bit Unique, Factory Pre-Programmed identifier
- 192 bit User-Programmable
⢠Temperature Range
â Commercial = 0°C to +70°C
â Industrial: -40°C to +85°C
⢠Packages Available
â 16-lead SOIC (300 mils)
â 8-contact WSON (6mm x 8mm)
â 8-lead SOIC (200 mils)
⢠All devices are RoHS compliant
PRODUCT DESCRIPTION
The SST 25 series Serial Flash family features a four-wire,
SPI-compatible interface that allows for a low pin-count
package which occupies less board space and ultimately
lowers total system costs. SST25VF064C SPI serial flash
memory is manufactured with SST proprietary, high-perfor-
mance CMOS SuperFlash technology. The split-gate cell
design and thick-oxide tunneling injector attain better reli-
ability and manufacturability compared with alternate
approaches.
The SST25VF064C significantly improves performance
and reliability, while lowering power consumption. The
device writes (Program or Erase) with a single power sup-
ply of 2.7-3.6V. The total energy consumed is a function of
the applied voltage, current, and time of application. Since
for any given voltage range, the SuperFlash technology
uses less current to program and has a shorter erase time,
the total energy consumed during any Erase or Program
operation is less than alternative flash memory technolo-
gies.
The SST25VF064C device is offered in 16-lead SOIC (300
mils), 8-contact WSON (6mm x 8mm), and 8-lead SOIC
(200 mils) packages. See Figure 2 for pin assignments.
©2009 Silicon Storage Technology, Inc.
S71392-02-000
9/09
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
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