SST25VF040B_10 Datasheet, PDF (1/33 Pages) Silicon Storage Technology, Inc – 4 Mbit SPI Serial Flash

4 Mbit SPI Serial Flash
SST25VF040B
FEATURES:
SST25VF040B4Mb Serial Peripheral Interface (SPI) flash memory
Data Sheet
• Single Voltage Read and Write Operations
– 2.7-3.6V
• Serial Interface Architecture
– SPI Compatible: Mode 0 and Mode 3
• High Speed Clock Frequency
– Up to 50/80 MHz
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Read Current: 10 mA (typical)
– Standby Current: 5 µA (typical)
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
– Uniform 64 KByte overlay blocks
• Fast Erase and Byte-Program:
– Chip-Erase Time: 35 ms (typical)
– Sector-/Block-Erase Time: 18 ms (typical)
– Byte-Program Time: 7 µs (typical)
• Auto Address Increment (AAI) Programming
– Decrease total chip programming time over
Byte-Program operations
• End-of-Write Detection
– Software polling the BUSY bit in Status Register
– Busy Status readout on SO pin in AAI Mode
• Hold Pin (HOLD#)
– Suspends a serial sequence to the memory
without deselecting the device
• Write Protection (WP#)
– Enables/Disables the Lock-Down function of the
status register
• Software Write Protection
– Write protection through Block-Protection bits in
status register
• Temperature Range
– Commercial: 0°C to +70°C
– Industrial: -40°C to +85°C
• Packages Available
– 8-lead SOIC (200 mils)
– 8-lead SOIC (150 mils)
– 8-contact WSON (6mm x 5mm)
• All devices are RoHS compliant
PRODUCT DESCRIPTION
The 25 series Serial Flash family features a four-wire, SPI-
compatible interface that allows for a low pin-count pack-
age which occupies less board space and ultimately lowers
total system costs. The SST25VF040B devices are
enhanced with improved operating frequency and even
lower power consumption. SST25VF040B SPI serial flash
memories are manufactured with SST proprietary, high-
performance CMOS SuperFlash technology. The split-gate
cell design and thick-oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches.
The SST25VF040B devices significantly improve perfor-
mance and reliability, while lowering power consumption.
The devices write (Program or Erase) with a single power
supply of 2.7-3.6V for SST25VF040B. The total energy
consumed is a function of the applied voltage, current, and
time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed during
any Erase or Program operation is less than alternative
flash memory technologies.
The SST25VF040B device is offered in an 8-lead SOIC
(200 mils), 8-lead SOIC (150 mils), and 8-contact WSON
(6mm x 5mm) packages. See Figure 2 for pin assignments.
©2009 Silicon Storage Technology, Inc.
S71295-05-000
10/09
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.