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SST25VF040 Datasheet, PDF (1/23 Pages) Silicon Storage Technology, Inc – 2 Mbit / 4 Mbit SPI Serial Flash | |||
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2 Mbit / 4 Mbit SPI Serial Flash
SST25VF040
FEATURES:
SST25VF020 / 0402Mb / 4Mb Serial Peripheral Interface (SPI) flash memory
EOL Product Data Sheet
⢠Single 2.7-3.6V Read and Write Operations
⢠Serial Interface Architecture
â SPI Compatible: Mode 0 and Mode 3
⢠20 MHz Max Clock Frequency
⢠Superior Reliability
â Endurance: 100,000 Cycles (typical)
â Greater than 100 years Data Retention
⢠Low Power Consumption:
â Active Read Current: 7 mA (typical)
â Standby Current: 8 µA (typical)
⢠Flexible Erase Capability
â Uniform 4 KByte sectors
â Uniform 32 KByte overlay blocks
⢠Fast Erase and Byte-Program:
â Chip-Erase Time: 70 ms (typical)
â Sector- or Block-Erase Time: 18 ms (typical)
â Byte-Program Time: 14 µs (typical)
⢠Auto Address Increment (AAI) Programming
â Decrease total chip programming time over
Byte-Program operations
⢠End-of-Write Detection
â Software Status
⢠Hold Pin (HOLD#)
â Suspends a serial sequence to the memory
without deselecting the device
⢠Write Protection (WP#)
â Enables/Disables the Lock-Down function of the
status register
⢠Software Write Protection
â Write protection through Block-Protection bits in
status register
⢠Temperature Range
â Commercial: 0°C to +70°C
â Industrial: -40°C to +85°C
â Extended: -20°C to +85°C
⢠Packages Available
â 8-lead SOIC 200 mil body width
â 8-contact WSON (5mm x 6mm)
⢠All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST serial flash family features a four-wire, SPI-
compatible interface that allows for a low pin-count pack-
age occupying less board space and ultimately lowering
total system costs. SST25VF040 SPI serial flash memo-
ries are manufactured with SST proprietary, high perfor-
mance CMOS SuperFlash Technology. The split-gate
cell design and thick-oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches.
The SST25VF040 device significantly improves perfor-
mance, while lowering power consumption. The total
energy consumed is a function of the applied voltage, cur-
rent, and time of application. Since for any given voltage
range, the SuperFlash technology uses less current to
program and has a shorter erase time, the total energy
consumed during any Erase or Program operation is less
than alternative flash memory technologies. The
SST25VF040 device operates with a single 2.7-3.6V
power supply.
The SST25VF040 device is offered in an 8-lead SOIC 200
mil body width (S2A) package and in an 8-contact WSON
package. See Figure 2 for the pin assignments.
©2006 Silicon Storage Technology, Inc.
S71231(04)-00-000
10/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
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