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SST25VF032B_10 Datasheet, PDF (1/28 Pages) Silicon Storage Technology, Inc – 32 Mbit SPI Serial Flash | |||
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32 Mbit SPI Serial Flash
SST25VF032B
FEATURES:
SST25VF032B32Mb Serial Peripheral Interface (SPI) flash memory
Data Sheet
⢠Single Voltage Read and Write Operations
â 2.7-3.6V
⢠Serial Interface Architecture
â SPI Compatible: Mode 0 and Mode 3
⢠High Speed Clock Frequency
â 80 MHz Max
⢠Superior Reliability
â Endurance: 100,000 Cycles (typical)
â Greater than 100 years Data Retention
⢠Low Power Consumption:
â Active Read Current: 10 mA (typical)
â Standby Current: 5 µA (typical)
⢠Flexible Erase Capability
â Uniform 4 KByte sectors
â Uniform 32 KByte overlay blocks
â Uniform 64 KByte overlay blocks
⢠Fast Erase and Byte-Program:
â Chip-Erase Time: 35 ms (typical)
â Sector-/Block-Erase Time: 18 ms (typical)
â Byte-Program Time: 7 µs (typical)
⢠Auto Address Increment (AAI) Word Programming
â Decrease total chip programming time over
Byte-Program operations
⢠End-of-Write Detection
â Software polling the BUSY bit in Status Register
â Busy Status readout on SO pin
⢠Hold Pin (HOLD#)
â Suspends a serial sequence to the memory
without deselecting the device
⢠Write Protection (WP#)
â Enables/Disables the Lock-Down function of the
status register
⢠Software Write Protection
â Write protection through Block-Protection bits in
status register
⢠Temperature Range
â Industrial: -40°C to +85°C
⢠Packages Available
â 8-lead SOIC (200 mils)
â 8-contact WSON (5 X 6 mm)
⢠All devices are RoHS compliant
PRODUCT DESCRIPTION
The SST 25 series Serial Flash family features a four-wire,
SPI-compatible interface that allows for a low pin-count
package which occupies less board space and ultimately
lowers total system costs. SST25VF032B SPI serial flash
memories are manufactured with SSTâs proprietary, high-
performance CMOS SuperFlash technology. The split-gate
cell design and thick-oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches.
The SST25VF032B devices significantly improve perfor-
mance and reliability, while lowering power consumption.
The devices write (Program or Erase) with a single power
supply of 2.7-3.6V for SST25VF032B. The total energy
consumed is a function of the applied voltage, current, and
time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed during
any Erase or Program operation is less than alternative
flash memory technologies.
The SST25VF032B device is offered in 8-lead SOIC (200
mils) and 8-contact WSON packages. See Figure 2 for pin
assignments.
©2009 Silicon Storage Technology, Inc.
S71327-03-000
05/09
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
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