SST25VF016B_10 Datasheet, PDF (1/28 Pages) Silicon Storage Technology, Inc – 16 Mbit SPI Serial Flash

16 Mbit SPI Serial Flash
SST25VF016B
FEATURES:
SST25VF016B16Mb Serial Peripheral Interface (SPI) flash memory
Data Sheet
• Single Voltage Read and Write Operations
– 2.7-3.6V
• Serial Interface Architecture
– SPI Compatible: Mode 0 and Mode 3
• High Speed Clock Frequency
– Up to 80 MHz
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Read Current: 10 mA (typical)
– Standby Current: 5 µA (typical)
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
– Uniform 64 KByte overlay blocks
• Fast Erase and Byte-Program:
– Chip-Erase Time: 35 ms (typical)
– Sector-/Block-Erase Time: 18 ms (typical)
– Byte-Program Time: 7 µs (typical)
• Auto Address Increment (AAI) Programming
– Decrease total chip programming time over
Byte-Program operations
• End-of-Write Detection
– Software polling the BUSY bit in Status Register
– Busy Status readout on SO pin in AAI Mode
• Hold Pin (HOLD#)
– Suspends a serial sequence to the memory
without deselecting the device
• Write Protection (WP#)
– Enables/Disables the Lock-Down function of the
status register
• Software Write Protection
– Write protection through Block-Protection bits in
status register
• Temperature Range
– Commercial: 0°C to +70°C
– Industrial: -40°C to +85°C
• Packages Available
– 8-lead SOIC (200 mils)
– 8-contact WSON (6mm x 5mm)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
SST’s 25 series Serial Flash family features a four-wire,
SPI-compatible interface that allows for a low pin-count
package which occupies less board space and ultimately
lowers total system costs. The SST25VF016B devices are
enhanced with improved operating frequency and even
lower power consumption than the original SST25VFxxxA
devices. SST25VF016B SPI serial flash memories are
manufactured with SST’s proprietary, high-performance
CMOS SuperFlash technology. The split-gate cell design
and thick-oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
The SST25VF016B devices significantly improve perfor-
mance and reliability, while lowering power consumption.
The devices write (Program or Erase) with a single power
supply of 2.7-3.6V for SST25VF016B. The total energy
consumed is a function of the applied voltage, current, and
time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed during
any Erase or Program operation is less than alternative
flash memory technologies.
The SST25VF016B device is offered in both 8-lead SOIC
(200 mils) and 8-contact WSON (6mm x 5mm) packages.
See Figure 2 for pin assignments.
©2008 Silicon Storage Technology, Inc.
S71271-03-000
9/08
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.