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SST25VF010 Datasheet, PDF (1/22 Pages) Silicon Storage Technology, Inc – 1 Mbit SPI Serial Flash | |||
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1 Mbit SPI Serial Flash
SST25VF010
FEATURES:
SST25VF0101 Mb Serial Peripheral Interface (SPI) flash memory
Data Sheet
⢠Single 2.7-3.6V Read and Write Operations
⢠Serial Interface Architecture
â SPI Compatible: Mode 0 and Mode 3
⢠20 MHz Max Clock Frequency
⢠Superior Reliability
â Endurance: 100,000 Cycles (typical)
â Greater than 100 years Data Retention
⢠Low Power Consumption:
â Active Read Current: 7 mA (typical)
â Standby Current: 8 µA (typical)
⢠Flexible Erase Capability
â Uniform 4 KByte sectors
â Uniform 32 KByte overlay blocks
⢠Fast Erase and Byte-Program:
â Chip-Erase Time: 70 ms (typical)
â Sector- or Block-Erase Time: 18 ms (typical)
â Byte-Program Time: 14 µs (typical)
⢠Auto Address Increment (AAI) Programming
â Decrease total chip programming time over
Byte-Program operations
⢠End-of-Write Detection
â Software Status
⢠Hold Pin (HOLD#)
â Suspends a serial sequence to the memory
without deselecting the device
⢠Write Protection (WP#)
â Enables/Disables the Lock-Down function of the
status register
⢠Software Write Protection
â Write protection through Block-Protection bits in
status register
⢠Packages Available
â 8-lead SOIC (4.9mm x 6mm)
â 8-contact WSON
PRODUCT DESCRIPTION
SSTâs serial flash family features a four-wire, SPI-com-
patible interface that allows for a low pin-count package
occupying less board space and ultimately lowering total
system costs. SST25VF010 SPI serial flash memory is
manufactured with SSTâs proprietary, high performance
CMOS SuperFlash Technology. The split-gate cell design
and thick-oxide tunneling injector attain better reliability
and manufacturability compared with alternate
approaches.
The SST25VF010 device significantly improves perfor-
mance, while lowering power consumption. The total
energy consumed is a function of the applied voltage,
current, and time of application. Since for any given volt-
age range, the SuperFlash technology uses less current
to program and has a shorter erase time, the total energy
consumed during any Erase or Program operation is less
than alternative flash memory technologies. The
SST25VF010 device operates with a single 2.7-3.6V
power supply.
The SST25VF010 device is offered in both 8-lead SOIC
and 8-contact WSON packages. See Figure 1 for the pin
assignments.
©2003 Silicon Storage Technology, Inc.
S71233-01-000
8/03
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
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