SST13LP02 Datasheet, PDF (1/25 Pages) Silicon Storage Technology, Inc – 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier

2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Features:
SST13LP022.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
Preliminary Specifications
• High Gain:
– Typically 27-28 dB gain across 2.4-2.5 GHz
– Typically 30-34 dB gain across 4.9-5.8 GHz
• High linear output power:
– >25 dBm P1dB (Pulsed single-tone signal) across
2.4-2.5 GHz
– Meets 802.11b OFDM ACPR requirement up to
21.5 dBm across 2.4-2.5 GHz
– Meets 802.11g OFDM ACPR requirement up to
22 dBm across 2.4-2.5 GHz
– Added EVM~4% up to 19 dBm for
54 Mbps 802.11g signal across 2.4-2.5 GHz
– >25 dBm P1dB (Pulsed single-tone signal)
across 4.9-5.8 GHz
– Meets 802.11a OFDM ACPR requirement up to
22 dBm across 4.9-5.8GHz
– Added EVM~4% up to 18 dBm for
54 Mbps 802.11a signal across 4.9-5.8GHz
• High power-added efficiency/Low operating
current for 802.11a/b/g applications
– ~220 mA @ P_OUT = 22 dBm for 802.11g
– ~205 mA @ P_OUT = 21.5 dBm for 802.11b
– ~380 mA @ P_OUT = 22 dBm for 802.11a
• Built-in Ultra-low I_REF power-up/down control
– I_REF <2 mA
• Low idle current
– ~55 mA I_CQ (802.11b/g)
– ~135 mA I_CQ (802.11a)
• High-speed power-up/down
– Turn on/off time (10%-90%) <100 ns
– Typical power-up/down delay with driver delay
included <200 ns
• High temperature stability
– ~2/1 dB gain/power variation between 0°C to
+85°C across 2.4-2.5 GHz
– ~8/2 dB gain/max linear power variation between
0°C to +85°C across 4.9-5.8 GHz
– ~1 dB detector variation over 0°C to +85°C
• Low shut-down current (< 0.1 µA)
• On-chip power detection
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 24-lead WQFN (4mm x 4mm)
– Non-Pb (lead-free) packages available
Applications:
• WLAN (IEEE 802.11a/g/b)
• Japanese WLAN
• HyperLAN2
• Multimedia
• Home RF
• Cordless phones
Product Description
The SST13LP02 is a high-efficiency, dual-band power
amplifier based on the highly-reliable InGaP/GaAs HBT
technology.
The SST13LP02 can be easily configured for high-power
applications with superb power-added efficiency while
operating over the 802.11a/b/g frequency band for U.S.,
European, and Japanese markets (2.4-2.5 GHz and 4.9-
5.8 GHz).
The SST13LP02 has excellent linearity, typically ~4%
added EVM at 19 dBm output power, which is essential for
54 Mbps 802.11g operation while meeting 802.11g spec-
trum mask at 22 dBm and 802.11b spectrum mask at 21.5
dBm. For 802.11a operation, the SST13LP02 has demon-
strated typically ~4% added EVM at 18 dBm output power
while meeting 802.11a spectrum mask at 22 dBm. The
SST13LP02 also has wide-range (>15 dB), temperature-
stable (~1.5 dB over 85°C), single-ended power detectors
which lower users’ cost on power control.
The power amplifier IC also features easy board-level
usage along with high-speed power-up/down control.
Ultra-low reference current (total I_REF <2 mA) makes the
SST13LP02 controllable by an on/off switching signal
directly from the baseband chip. These features, coupled
with low operating current, make the SST13LP02 ideal
for the final stage power amplification in both battery-
powered 802.11a/b/g WLAN transmitters and access
point applications.
The SST13LP02 is offered in a 24-contact WQFN package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
©2006 SST Communications Corp.
S71304-01-000
9/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.