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SST12LP14A Datasheet, PDF (1/18 Pages) Silicon Storage Technology, Inc – 2.4 GHz High-Power, High-Gain Power Amplifier | |||
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2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14A
FEATURES:
SST-GP1214A2.4 GHz High Gain High Power PA
Preliminary Specifications
⢠High Gain:
â Typically 29 dB gain across 2.4~2.5 GHz over
temperature 0°C to +85°C
⢠High linear output power:
â >28 dBm P1dB
- Please refer to âAbsolute Maximum Stress
Ratingsâ on page 4
â Meets 802.11g OFDM ACPR requirement up to
23 dBm
â ~4% added EVM up to 21 dBm for
54 Mbps 802.11g signal
â Meets 802.11b ACPR requirement up to 23 dBm
⢠High power-added efficiency/Low operating
current for both 802.11g/b applications
â ~23%/210 mA @ POUT = 22 dBm for 802.11g
â ~25%/240 mA @ POUT = 23 dBm for 802.11b
⢠Single-pin low IREF power-up/down control
â IREF <2 mA
⢠Low idle current
â ~70 mA ICQ
⢠High-speed power-up/down
â Turn on/off time (10%- 90%) <100 ns
â Typical power-up/down delay with driver delay
included <200 ns
⢠High temperature stability
â ~1 dB gain/power variation between 0°C to +85°C
⢠Low shut-down current (< 0.1 µA)
⢠Excellent On-chip power detection
â <+/- 0.3dB variation between 0°C to +85°C
â <+/- 0.4dB variation with 2:1 VSWR mismatch
â <+/- 0.3dB variation Ch1 through Ch14
⢠20 dB dynamic range on-chip power detection
⢠Simple input/output matching
⢠Packages available
â 16-contact VQFN â 3mm x 3mm
⢠All non-Pb (lead-free) devices are RoHS compliant
APPLICATIONS:
⢠WLAN (IEEE 802.11g/b)
⢠Home RF
⢠Cordless phones
⢠2.4 GHz ISM wireless equipment
PRODUCT DESCRIPTION
The SST12LP14A is a versatile power amplifier based on
the highly-reliable InGaP/GaAs HBT technology.
The SST12LP14A can be easily configured for high-power
applications with good power-added efficiency while oper-
ating over the 2.4- 2.5 GHz frequency band. It typically pro-
vides 29 dB gain with 23% power-added efficiency @ POUT
= 22 dBm for 802.11g and 25% power-added efficiency @
POUT = 23 dBm for 802.11b.
The SST12LP14A has excellent linearity, typically ~4%
added EVM at 21 dBm output power which is essential for
54 Mbps 802.11g operation while meeting 802.11g spec-
trum mask at 23 dBm. The SST12LP14A can also be con-
figured for high-efficiency operation (typically 17 dBm linear
54 Mbps 802.11g output power at 85 mA total power con-
sumption) which is desirable in embedded applications
such as in hand-held units.
The SST12LP14A also features easy board-level usage
along with high-speed power-up/down control through a
single combined reference voltage pin. Ultra-low reference
current (total IREF ~2 mA) makes the SST12LP14A control-
lable by an on/off switching signal directly from the base-
band chip. These features coupled with low operating
current make the SST12LP14A ideal for the final stage
power amplification in battery-powered 802.11g/b WLAN
transmitter applications.
The SST12LP14A has an excellent on-chip, single-ended
power detector, which features wide-range (>15 dB) with
dB-wise linearization and high stability over temperature (<
+/-0.3 dB 0°C to +85°C), frequency (<+/-0.3 dB across
Channels 1 through 14), and output load (<+/-0.4 dB
with 2:1 output VSWR all phases). The excellent on-
chip power detector provides a reliable solution to
board-level power control.
The SST12LP14A is offered in 16-contact VQFN package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
©2005 SST Communications Corp.
S71300-02-000
3/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
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