SST12LP14 Datasheet, PDF (1/12 Pages) Silicon Storage Technology, Inc – 2.4 GHz Power Amplifier

2.4 GHz Power Amplifier
SST12LP14
FEATURES:
SST12LP142.4 GHz Power Amplifier
Preliminary Specifications
• High Gain:
– Typically 30 dB gain across 2.4~2.5 GHz over
temperature 0°C to +80°C
• High linear output power:
– >26.5 dBm P1dB
– Meets 802.11g OFDM ACPR requirement up to
23 dBm
– Added EVM ~4% up to 20 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 24 dBm
• High power-added efficiency/Low operating
current for both 802.11g/b applications
– ~22% @ P_OUT = 22 dBm for 802.11g
– ~26% @ P_OUT = 23.5 dBm for 802.11b
• Built-in Ultra-low I_REF power-up/down control
– I_REF <4 mA
• Low idle current
– ~60 mA I_CQ
• High-speed power-up/down
– Turn on/off time (10%~90%) <100 ns
– Typical power-up/down delay with driver delay
included <200 ns
• High temperature stability
– ~1 dB gain/power variation between 0°C to +80°C
– ~1 dB detector variation over 0°C to +80°C
• Low shut-down current (< 0.1 µA)
• On-chip power detection
• 25 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 16-contact VQFN (3mm x 3mm)
– Non-Pb (lead-free) packages available
APPLICATIONS:
• WLAN (IEEE 802.11g/b)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
PRODUCT DESCRIPTION
The SST12LP14 is a high-performance power amplifier IC
based on the highly-reliable InGaP/GaAs HBT technology.
The SST12LP14 can be easily configured for high-power,
high-efficiency applications with superb power-added effi-
ciency while operating over the 2.4~2.5 GHz frequency
band. It typically provides 30 dB gain with 22% power-
added efficiency @ P_OUT = 22 dBm for 802.11g and 27%
power-added efficiency @ P_OUT = 24 dBm for 802.11b.
The SST12LP14 has excellent linearity, typically <4%
added EVM up to 20 dBm output power which is essential
for 54 Mbps 802.11g operation while meeting 802.11g
spectrum mask at 23 dBm. The SST12LP14 also has
wide-range (>25 dB), temperature-stable (~1 dB over
80°C), single-ended/differential power detectors which
lower users’ cost on power control.
The power amplifier IC also features easy board-level
usage along with high-speed power-up/down control. Ultra-
low reference current (total I_REF <4 mA) makes the
SST12LP14 controllable by an on/off switching signal
directly from the baseband chip. These features coupled
with low operating current make the SST12LP14 ideal for
the final stage power amplification in battery-powered
802.11g/b WLAN transmitter applications.
The SST12LP14 is offered in 16-contact VQFN package.
See Figure 1 for pin assignments and Table 1 for pin
descriptions.
©2005 SST Communications Corp.
S71279-00-000
1/05
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.