SST12LP07 Datasheet, PDF (1/14 Pages) Silicon Storage Technology, Inc – 2.4 GHz High-Power, High-Gain Power Amplifier

2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
FEATURES:
SST12LP072.4 GHz High Gain High Power PA
Preliminary Specifications
• High Gain:
– Typically 29 dB gain across 2.4–2.5 GHz over
temperature 0°C to +85°C
• High linear output power:
– >26 dBm P1dB
- Please refer to “Absolute Maximum Stress
Ratings” on page 4
– Meets 802.11g OFDM ACPR requirement up to
22 dBm
– ~2.5% added EVM up to 19 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 22 dBm
• High power-added efficiency/Low operating
current for both 802.11g/b applications
– ~22%/220 mA @ P_OUT = 22 dBm for 802.11g
– ~21%/230 mA @ P_OUT = 22 dBm for 802.11b
• Single-pin low I_REF power-up/down control
– I_REF <2 mA
• Low idle current
– ~70 mA I_CQ
• High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay
included <200 ns
• High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C
• Low shut-down current (< 0.1 µA)
• Excellent On-chip power detection
– <+/- 0.3dB variation between 0°C to +85°C
– <+/- 0.4dB variation with 2:1 VSWR mismatch
– <+/- 0.3dB variation Ch1 through Ch14
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 16-contact VQFN – 3mm x 3mm
• All non-Pb (lead-free) devices are RoHS compliant
APPLICATIONS:
• WLAN (IEEE 802.11g/b)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
PRODUCT DESCRIPTION
The SST12LP07 is a versatile power amplifier based on
the highly-reliable InGaP/GaAs HBT technology.
The SST12LP07 can be easily configured for high-power
applications with good power-added efficiency while oper-
ating over the 2.4- 2.5 GHz frequency band. This device
typically provides 29 dB gain with 22% power-added effi-
ciency @ P_OUT = 22 dBm for 802.11g and 21% power-
added efficiency @ P_OUT = 22 dBm for 802.11b.
The SST12LP07 has excellent linearity, typically ~2.5%
added EVM at 19 dBm output power which is essential for
54 Mbps 802.11g/n operation while meeting 802.11g spec-
trum mask at 22 dBm. The SST12LP07 can also be config-
ured for high-efficiency operation, typically 17 dBm linear 54
Mbps 802.11g output power at 85 mA total power con-
sumption. High-efficiency operation is desirable in embed-
ded applications such as in hand-held units.
The SST12LP07 also features easy board-level usage
along with high-speed power-up/down control through a
single combined reference voltage pin. Ultra-low reference
current (total I_REF ~2 mA) makes the SST12LP07 controlla-
ble by an on/off switching signal directly from the baseband
chip. These features coupled with low operating current
make the SST12LP07 ideal for the final stage power ampli-
fication in battery-powered 802.11g/b WLAN transmitter
applications.
The SST12LP07 has an excellent on-chip, single-ended
power detector, which features wide-range (~20 dB) with
dB-wise linearization and high stability over temperature (<
+/-0.3 dB 0°C to +85°C), frequency (<+/-0.3 dB across
Channels 1 through 14), and output load (<+/-0.4 dB
with 2:1 output VSWR all phases). The excellent on-
chip power detector provides a reliable solution to
board-level power control.
The SST12LP07 is offered in a 16-contact VQFN package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
©2006 Silicon Storage Technology, Inc.
S71321-00-000
5/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.