SST12LP00 Datasheet, PDF (1/14 Pages) Silicon Storage Technology, Inc – 2.4-2.5 GHz Power Amplifier

2.4-2.5 GHz Power Amplifier
SST12LP00
FEATURES:
SST12LP002.4 GHz Power Amplifier
APPLICATIONS:
Preliminary Specifications
• High Gain:
– Typically 28 dB gain across 2.4– 2.5 GHz over
temperatures 0– 85°C
• High linear output power:
– >24 dBm P1dB
• High power-added efficiency/low operating cur-
rent for Bluetooth applications
– ~50% PAE or 115 mA total current consumption
@ Pout = 23 dBm for V_cc = 3.3V and GCTL =
3.0V
• Low idle current
– ~10 mA I_CQ
• Simple input/output matching
• Packages available
– 6-contact VQFN and UQFN (3 x 1.6mm²)
• Bluetooth
• USB Dongles
• 2.4 GHz Cordless phones
PRODUCT DESCRIPTION
The SST12LP00 is a high-power and high-gain power
amplifier based on the highly reliable InGaP/GaAs
HBT technology. SST12LP00 is easily configured for
high-power and high-efficiency applications while
operating over the 2.4- 2.5 GHz frequency band. This
device typically provides 30 dB gain with better than
50% power added efficiency @ P_out = 23 dBm.
The SST12LP00’s excellent linearity is well suited for
Class 1 Bluetooth operation. The power amplifier IC
also features easy board-level usage along with high
speed power up/down control. A low reference current
makes SST12LP00 ideal for the final stage power
amplification in battery-powered Bluetooth, USB Don-
gle, or cordless phone transmitter applications.
The SST12LP00 is offered in both 6-contact VQFN
and UQFN packages. See Figure 2 for pin assign-
ments and Table 1 for pin descriptions.
©2006 SST Communications Corp.
S71283-01-000
3/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.