SST12LN01 Datasheet, PDF (1/11 Pages) Silicon Storage Technology, Inc – 2.4-2.5 GHz Low-Noise Amplifier

2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
FEATURES:
SST12L012.4-2.5 GHz Low-Noise Amplifier
APPLICATIONS:
• Suitable Gain:
– Typically 12-13 dB gain across 2.4–2.5 GHz
• Low Noise Figure:
– 1.2-1.5 dB across 2.4–2.5 GHz
• IIP3:
– 3 dBm across 2.4–2.5 GHz
• Low Current Consumption
– 12 mA across 2.4–2.5 GHz
• 50Ω Input/Output Matched
• Packages available
– 16-contact UQFN – 3 mm x 1.6 mm
• All non-Pb (lead-free) devices are RoHS compliant
• WLAN
• Bluetooth
• Wireless Network
Preliminary Specifications
PRODUCT DESCRIPTION
The SST12LN01 is a cost effective Low Noise Amplifier
(LNA) which does not require external RF-matching com-
ponents on PCB applications. This device is based on the
0.5µm GaAs PHEMT technology, and complies with
802.11 b/g applications.
SST12LN01 provides high-performance, low-noise, and
mild-gain operations within the 2.4–2.5 GHz frequency
band. Across this frequency band, this device typically pro-
vides 12-13 dB gain.
This LNA cell is equipped with a self DC-biasing scheme,
which helps keep the DC consumption very low during
operation. A pair of singled-ended, input and output ports is
assigned to the LNA cell with a 50 RF match.
The SST12LN01 is offered in a 6-contact UQFN package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
©2006 Silicon Storage Technology, Inc.
S71329-00-000
9/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.