SST11LP12 Datasheet, PDF (1/17 Pages) Silicon Storage Technology, Inc – 4.9-5.8 GHz High-Linearity Power Amplifier

4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
FEATURES:
SST1LP124.9-5.8 GHz High-Linearity Power Amplifier
Preliminary Specifications
• High Gain:
– Typically 35 dB gain across 4.9-5.8 GHz over
temperature 0°C to +85°C
• High linear output power:
– ~28 dBm P1dB (Pulsed single-tone signal)
– Meet 802.11a OFDM ACPR requirement up to
23+ dBm over ~ entire band
– Added EVM~4% up to 21 dBm for
54 Mbps 802.11a signal
• High power-added efficiency/Low operating
current for 54 Mbps 802.11a applications
– ~12% @ P_OUT = 21 dBm for 54 Mbps
• Built-in Ultra-low I_REF power-up/down control
– I_REF <3 mA
• Low idle current
– ~130 mA I_CQ
• High speed power up/down
– Turn on/off time (10%~90%) <100 ns
– Typical power-up/down delay with driver delay
included <200 ns
• High temperature stability
– ~1.5/1.0 dB gain/power variation between
0°C to +85°C
– ~1 dB detector variation over 0°C to +85°C
• Low shut-down current (< 0.1 µA)
• On-chip power detection
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 16-contact WQFN (3mm x 3mm)
– Non-Pb (lead-free) packages available
APPLICATIONS:
• WLAN (IEEE 802.11a)
• Japan WLAN
• HyperLAN2
• Multimedia
PRODUCT DESCRIPTION
The SST11LP12 is a high-power, high-gain power amplifier
based on the highly-reliable InGaP/GaAs HBT technology.
The SST11LP12 can be easily configured for high-power,
high-efficiency applications with superb power-added effi-
ciency while operating over the entire 802.11a frequency
band for U.S., European, and Japanese markets (4.9-5.8
GHz). It typically provides 35 dB gain with 16% power-
added efficiency @ P_OUT = 23 dBm.
The SST11LP12 has excellent linearity, typically ~4%
added EVM at 21 dBm output power which is essential for
54 Mbps 802.11a operation while meeting 802.11a spec-
trum mask at 23+ dBm. SST11LP12 also has wide-range
(>20 dB), temperature-stable (~1 dB over 85°C), single-
ended/differential power detectors which lower users’ cost
on power control.
The power amplifier IC also features easy board-level
usage along with high-speed power-up/down control. Ultra-
low reference current (total I_REF <3 mA) makes the
SST11LP12 controllable by an on/off switching signal
directly from the baseband chip. These features coupled
with low operating current make the SST11LP12 ideal for
the final stage power amplification in battery-powered
802.11a WLAN transmitter and access point applications.
The SST11LP12 is offered in 16-contact WQFN package.
See Figure 1 for pin assignments and Table 1 for pin
descriptions.
©2006 SST Communications Corp.
S71278-01-000
1/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.