SST11LP11 Datasheet, PDF (1/14 Pages) Silicon Storage Technology, Inc – 4.9-5.8 GHz High-Linearity Power Amplifier

4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP11
FEATURES:
SST11LP114.9-5.8 GHz High-Linearity Power Amplifier
APPLICATIONS:
Preliminary Specifications
• Gain:
– ~24 dB gain across the 4.9-5.8 GHz band
• High linear output power:
– ~25 dBm P1dB
– EVM~4% at 18 dBm over 4.9-5.8 GHz for 64
QAM/54 Mbps operation
– ACPR below IEEE 802.11a Mask up to 21 dBm
across full band
• Low idle current
– ~80 mA I_CQ
• Low shut-down current (< 1 µA)
• 20 dB dynamic range on-chip differential linear
power detection
• Simple RF matching circuits
• Packages available
– 16-contact VQFN (3mm x 3mm)
– Non-Pb (lead-free) packages available
• WLAN (IEEE 802.11a)
• Japan WLAN
• HyperLAN2
• Multimedia
PRODUCT DESCRIPTION
The SST11LP11 is a high-performance power amplifier IC
based on the highly-reliable InGaP/GaAs HBT technology.
The SST11LP11 is designed to operate over the entire
WLAN 802.11a band between 4.9-5.8 GHz frequency
band for the U.S., European, and Japanese markets while
achieving highly-linear power and low EVM.
The SST11LP11 power amplifier IC features easy board-
level usage along with on-chip linear power detection and
power-down control. These features coupled with low cur-
rent draw at maximum linear power make the SST11LP11
ideal for battery-powered 802.11a WLAN transmitter appli-
cations.
The SST11LP11 is offered in 16-contact VQFN package.
See Figure 1 for pin assignments and Table 1 for pin
descriptions.
©2005 SST Communications Corp.
S71284-00-000
1/05
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.