XR-85 Datasheet, PDF (1/1 Pages) Shanghai Sunrise Electronics – SILICON EPITAXIAL PLANAR SWITCHING DIODE

SHANGHAI SUNRISE ELECTRONICS CO., LTD.
XR-85
SILICON EPITAXIAL
PLANAR SWITCHING DIODE
REVERSE VOLTAGE: 20V
FORWARD CURRENT: 100mA
TECHNICAL
SPECIFICATION
FEATURES
• Small glass structure ensures high reliability
• Low leakage
• High temperature soldering guaranteed:
250^oC/10S/9.5mm lead length
at 5 lbs tension
DO - 34
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Glass,hermetically sealed
• Polarity: Color band denotes cathode
• Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25^oC ambient temperature unless otherwise specified)
RATINGS
SYMBOL
VALUE
Reverse Voltage
V_R
20
Peak Reverse Voltage
V_RM
35
Forward Current (average)
I_O
100
Forward Voltage (I_F=10mA)
V_F
1
Reverse Current (V_R=20V)
I_R1
100
Reverse Current (V_R=20V,T_J=100^oC)
I_R2
10
Capacitance
(Note 1)
C_t
1.5
Forward Differential Resistor (I_F=10mA, f=100MHz)
r_F
0.6
Thermal Resistance
(junction to ambient)
(Note 2)
R_θ(ja)
0.35
Operating Junction and Storage Temperature Range
T_STG,T_J
-55 ~ +150
Notes:
1: V_R=10V, f=1 MHz
2: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
UNITS
V
V
mA
V
nA
µA
pF
Ω
o_C/mW
o_C
http://www.sse-diode.com