SB85 Datasheet, PDF (1/1 Pages) Shanghai Sunrise Electronics – SILICON SCHOTTKY DETECTING DIODE

SHANGHAI SUNRISE ELECTRONICS CO., LTD.
SB85
SILICON SCHOTTKY
DETECTING DIODE
REVERSE VOLTAGE: 50V
FORWARD CURRENT: 150mA
TECHNICAL
SPECIFICATION
FEATURES
• Small glass structure ensures high reliability
• Fast switching
• Low leakage
• High temperature soldering guaranteed:
250^oC/10S/9.5mm lead length
at 5 lbs tension
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Glass,hermetically sealed
• Polarity: Color band denotes cathode
• Mounting position: Any
DO - 34
DO - 35
1.0 (25.4)
MIN.
.085 (2.2)
.120 (3.0)
1.0 (25.4)
MIN.
.050 (1.27)
.075 (1.91) ^DIA.
.120 (3.0)
.200 (5.1)
.060 (1.5)
.090 (2.3) ^DIA.
1.0 (25.4)
MIN.
.018 (0.46)
.022 (0.56) ^DIA.
1.0 (25.4)
MIN.
.018 (0.46)
.022 (0.56) ^DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25^oC ambient temperature unless otherwise specified)
RATINGS
SYMBOL
Reverse Voltage
Forward Current (peak)
Forward Current (D.C.)
Forward Voltage (D.C.)
Reverse Current (V_R=30V)
Capacitance
V_R
I_FM
I_F
I_F=10mA
V_F1
I_F=100mA
V_F2
I_R
(Note 1)
Ct
Detection Effectiveness
(Note 2)
Operating Junction and Storage
Temperature Range
T_J,T_STG
Notes:
1. VR=10V, f=1MHz
2. Vm=3V(peak), f=30MHz, RL=3.9KΩ, Ct=10pF.
Typ.
6
60%
VALUE
Max.
50
150
30
0.4
0.8
3
-55 +125
UNITS
V
mA
mA
V
V
µA
pF
o_C
http://www.sse-diode.com