SB1620C Datasheet, PDF (1/1 Pages) Shanghai Sunrise Electronics – SCHOTTKY BARRIER RECTIFIER

SHANGHAI SUNRISE ELECTRONICS CO., LTD.
SB1620C THRU SB1660C
SCHOTTKY BARRIER
RECTIFIER
TECHNICAL
SPECIFICATION
VOLTAGE: 20 TO 60V CURRENT: 16A
FEATURES
• Epitaxial construction for chip
• High current capability
• Low forward voltage drop
• Low power loss, high efficiency
• High surge capability
• High temperature soldering guaranteed:
250^oC/10sec/0.375"(9.5mm) lead length
at 5 lbs tension
TO-220
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Common cathode,Suffix"A"Common anode
• Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25^oC, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
SYMBOL
SB
1620C
SB
1630C
SB
1635C
SB
1640C
SB
1650C
SB
1660C
UNITS
Maximum Repetitive Peak Reverse Voltage
V_RRM
20
30
35
40
50
60
V
Maximum RMS Voltage
V_RMS
14
21
25
28
35
42
V
Maximum DC Blocking Voltage
V_DC
20 30 35 40 50 60
V
Maximum Average Forward Rectified Current
(T_C=95^oC)
I_F(AV)
16
A
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
I_FSM
150
A
Maximum Forward Voltage (at 8.0A DC)
V_F
Maximum DC Reverse Current
(at rated DC blocking voltage)
T_a=25^oC
T_a=100^oC
I_R
Typical Junction Capacitance
(Note 1) C_J
Typical Thermal Resistance
(Note 2) R_θ(ja)
Operating Junction Temperature
T_J
Storage Temperature
T_STG
Note:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0V_dc
2.Thermal resistance from junction to case
0.65
5.0
50.0
700
3
-65 to +125
-65 to +150
0.75
500
-65 to +150
V
mA
mA
pF
o_C/W
o_C
o_C
3. Suffix "A" common anode
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