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| RS1AB Datasheet, PDF (1/1 Pages) Shanghai Sunrise Electronics – SURFACE MOUNT FAST SWITCHING RECTIFIER | |||
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SHANGHAI SUNRISE ELECTRONICS CO., LTD.
RS1AB THRU RS1MB
SURFACE MOUNT FAST
SWITCHING RECTIFIER
VOLTAGE: 50 TO 1000V CURRENT: 1.0A
TECHNICAL
SPECIFICATION
FEATURES
⢠Ideal for surface mount pick and
place application
⢠Low profile package
⢠Built-in strain relief
⢠High surge capability
⢠Glass passivated chip
⢠Fast recovery for high efficiency
⢠High temperature soldering guaranteed:
260oC/10sec/at terminal
MECHANICAL DATA
⢠Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
⢠Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
⢠Polarity: Color band denotes cathode
SMB/DO-214AA
B
A
C
F
G
D
H
A
B
C
D
MAX. .155(3.94) .180(4.57) .083(2.11) .012(0.305)
MIN. .130(3.30) .160(4.06) .077(1.96) .006(0.152)
E
F
G
H
MAX. .220(5.59) .096(2.44) .008(0.203) .060(1.52)
MIN. .205(5.21) .084(2.13) .004(0.102) .030(0.76)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive
load, derate current by 20%)
RATINGS
SYMBOL
RS1
AB
RS1
BB
RS1
DB
RS1
GB
RS1
JB
RS1
KB
RS1
MB
UNITS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(TL=110oC)
VRRM
VRMS
VDC
IF(AV)
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
1.0
A
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
IFSM
Maximum Instantaneous Forward Voltage
(at rated forward current)
VF
Maximum DC Reverse Current
(at rated DC blocking voltage)
Ta=25oC
Ta=125oC
IR
Maximum Reverse Recovery Time (Note 1) trr
30
A
1.3
V
5.0
µA
200
µA
150
250
500
nS
Typical Junction Capacitance
(Note 2) CJ
15
pF
Typical Thermal Resistance
(Note 3) Rθ(ja)
Storage and Operation Junction Temperature TSTG,TJ
30
-50 to +150
oC/W
oC
Note:
1.Reverse recovery condition IF=0.5A, IR=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0Vdc
3.Thermal resistance from junction to terminal mounted on 5Ã5mm copper pad area
http://www.sse-diode.com
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