RC30S01G Datasheet, PDF (1/1 Pages) Shanghai Sunrise Electronics – SILICON GPP CELL RECTIFIER

SHANGHAI SUNRISE ELECTRONICS CO., LTD.
RC30S01G THRU RC30S10G
SILICON GPP
CELL RECTIFIER
VOLTAGE: 100 TO 1000V CURRENT: 30A
TECHNICAL
SPECIFICATION
FEATURES
• Glass passivated junction chip
• High surge capability
• Solderable electrode surfaces
• Ideal for hybrids
MECHANICAL DATA
• Polarity: Bottom or upper electrode denotes
cathode according to the notice
in package
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, resistive or inductive load rating at 25^oC, unless otherwise stated, for capacitive load, derate
current by 20%)
RATINGS
SYMBOL ^{RC30S RC30S RC30S RC30S RC30S RC30S} UNITS
01G 02G 04G 06G 08G 10G
Maximum Repetitive Peak Reverse Voltage
V_RRM
100
200
400
600
800 1000 V
Maximum RMS Voltage
V_RMS
70
140 280 420 560 700
V
Maximum DC Blocking Voltage
V_DC 100 200 400 600 800 1000 V
Maximum Average Forward Rectified Current
(T_a=55^oC)
I_F(AV)
30
(Note 2)
A
Peak Forward Surge Current (8.3ms single
I_FSM
400
A
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
V_F
Maximum DC Reverse Current
(at rated DC blocking voltage)
T_a=25^oC
T_a=150^oC
I_R
Typical Junction Capacitance
(Note 1) C_J
Typical Thermal Resistance
(Note 3) R_θ(ja)
Storage and Operation Junction Temperature T_STG,T_J
Note:
1. Measured at 1 MHz and applied voltage of 4.0V_dc
2. When mounted to heat sink from body.
3. Thermal resistance from junction to ambient.
1.00
10
750
300
1
-50 to +150
V
µA
µA
pF
o_C/W
o_C
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