RC10S01 Datasheet, PDF (1/1 Pages) Shanghai Sunrise Electronics – SILICON SILASTIC CELL RECTIFIER

SHANGHAI SUNRISE ELECTRONICS CO., LTD.
RC10S01 THRU RC10S10
SILICON SILASTIC
CELL RECTIFIER
TECHNICAL
SPECIFICATION
VOLTAGE: 100 TO 1000V CURRENT: 10A
FEATURES
• Low cost
• High surge capability
• Solderable electrode surfaces
• Ideal for hybrids
MECHANICAL DATA
• Polarity: Bottom or upper electrode denotes
cathode according to the notice in
package
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, resistive or inductive load rating at 25^oC, unless otherwise stated, for capacitive load, derate
current by 20%)
RATINGS
RC10S RC10S RC10S RC10S RC10S RC10S
SYMBOL
UNITS
01 02 04 06 08 10
Maximum Repetitive Peak Reverse Voltage V_RRM 100 200 400 600 800 1000 V
Maximum RMS Voltage
V_RMS 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
V_DC 100 200 400 600 800 1000 V
Maximum Average Forward Rectified Current
(T_a=55^oC)
I_F(AV)
10
A
(Note 2)
Peak Forward Surge Current (8.3ms single
I_FSM
400
A
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
V_F
Maximum DC Reverse Current
(at rated DC blocking voltage)
T_a=25^oC
T_a=150^oC
I_R
Typical Junction Capacitance
(Note 1) C_J
Typical Thermal Resistance
(Note 3) R_θ(ja)
Storage and Operation Junction Temperature T_STG,T_J
Note:
1. Measured at 1 MHz and applied voltage of 4.0V_dc
2. When mounted to heat sink from body.
3. Thermal resistance from junction to ambient.
1.0
10
500
300
1
-50 to +150
V
µA
µA
pF
o_C/W
o_C
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