IN4148 Datasheet, PDF (1/1 Pages) Shanghai Sunrise Electronics – SILICON EPITAXIAL PLANAR SWITCHING DIODE

SHANGHAI SUNRISE ELECTRONICS CO., LTD.
IN4148
SILICON EPITAXIAL PLANAR
SWITCHING DIODE
REVERSE VOLTAGE: 75V
FORWARD CURRENT: 150mA
TECHNICAL
SPECIFICATION
FEATURES
• Small glass structure ensures high reliability
• Fast switching
• Low leakage
• High temperature soldering guaranteed:
250^oC/10S/9.5mm lead length
at 5 lbs tension
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Glass,hermetically sealed
• Polarity: Color band denotes cathode
• Mounting position: Any
DO - 35
1.0 (25.4)
MIN.
.120 (3.0)
.200 (5.1)
.060 (1.5)
.090 (2.3) ^DIA.
1.0 (25.4)
MIN.
.018 (0.46)
.022 (0.56) ^DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25^oC ambient temperature unless otherwise specified)
RATINGS
SYMBOL
VALUE
Reverse Voltage
V_R
75
Peak Reverse Voltage
V_RM
100
Forward Current (average)
Repetitive Forward Peak Current
I_O
150
I_FRM
300
Forward Voltage (I_F=10mA)
V_F
1
Reverse Current (V_R=20V)
Reverse Current (V_R=75V)
I_R1
25
5
Reverse Current (V_R=20V,T_J=100^oC)
I_R2
50
Capacitance
(note 1)
Ct
4
Reverse Recovery Time
(note 2)
I_F
4
Thermal Resistance (junction to ambient)
(note 3)
Operating Junction and Storage Temperature Range
Notes:
R_θ(ja)
T_STG,T_J
0.35
-55 +175
1: V_R=0V, f=1 MHz
2: I_F=10mA to I_R=1mA, V_R=6V, R_L=100
3: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
UNITS
V
V
mA
mA
V
nA
µA
A
pF
nS
o_C/mW
o_C
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