English
Language : 

ES2A Datasheet, PDF (1/1 Pages) Jinan Gude Electronic Device – 2.0AMP. SUPER FAST RECOVRY SILICON RECTIFIERS
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
ES2A THRU ES2G
SURFACE MOUNT SUPER
FAST SWITCHING RECTIFIER
VOLTAGE: 50 TO 400V CURRENT: 2.0A
TECHNICAL
SPECIFICATION
FEATURES
• Ideal for surface mount pick and
place application
• Low profile package
• Built-in strain relief
• High surge capability
• Glass passivated chip
• Super fast recovery for high efficiency
• High temperature soldering guaranteed:
260oC/10sec/at terminal
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
SMB/DO-214AA
B
A
C
F
G
D
H
A
B
C
D
MAX. .155(3.94) .180(4.57) .083(2.11) .012(0.305)
MIN. .130(3.30) .160(4.06) .077(1.96) .006(0.152)
E
F
G
H
MAX. .220(5.59) .096(2.44) .008(0.203) .060(1.52)
MIN. .205(5.21) .084(2.13) .004(0.102) .030(0.76)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
SYMBOL ES2A ES2B ES2C ES2D ES2E ES2G UNITS
Maximum Repetitive Peak Reverse Voltage VRRM
50 100 150 200 300 400
V
Maximum RMS Voltage
VRMS
35 70 105 140 210 280
V
Maximum DC Blocking Voltage
VDC
50 100 150 200 300 400
V
Maximum Average Forward Rectified Current IF(AV)
2.0
A
(TL=110oC)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
IFSM
50
A
Maximum Instantaneous Forward Voltage
(at rated forward current)
VF
Maximum DC Reverse Current
(at rated DC blocking voltage)
Ta=25oC
Ta=100oC
IR
Maximum Reverse Recovery Time (Note 1) trr
0.95
1.25
V
5.0
µA
350
µA
35
nS
Typical Junction Capacitance
(Note 2)
Typical Thermal Resistance
(Note 3)
Storage and Operation Junction Temperature
CJ
Rθ(ja)
TSTG,TJ
25
20
-50 to +150
pF
oC/W
oC
Note:
1.Reverse recovery condition IF=0.5A, IR=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0Vdc
3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
http://www.sse-diode.com