2CK48 Datasheet, PDF (1/1 Pages) Shanghai Sunrise Electronics – SILICON EPITAXIAL PLANAR SWITCHING DIODE

SHANGHAI SUNRISE ELECTRONICS CO., LTD.
2CK48, 2CK48A, 2CK48B
SILICON EPITAXIAL PLANAR
SWITCHING DIODE
REVERSE VOLTAGE: 35-60-90V
FORWARD CURRENT: 150mA
TECHNICAL
SPECIFICATION
FEATURES
• Small glass structure ensures high reliability
• Fast switching
• Low leakage
• High temperature soldering guaranteed:
250^oC/10S/9.5mm lead length
at 5 lbs tension
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Glass,hermetically sealed
• Polarity: Color band denotes cathode
• Mounting position: Any
DO - 35
1.0 (25.4)
MIN.
.120 (3.0)
.200 (5.1)
.060 (1.5)
.090 (2.3) ^DIA.
1.0 (25.4)
MIN.
.018 (0.46)
.022 (0.56) ^DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25^oC ambient temperature unless otherwise specified)
RATINGS
SYMBOL 2CK48 2CK48A 2CK48B UNITS
Reverse Voltage
Peak Reverse Voltage
Forward Current (average)
Repetitive Forward Peak Current
Forward Voltage (I_F=10mA)
Reverse Current (V=V_R)
Reverse Current (V=V_R,T_J=100^oC)
Capacitance
V_R
35
60
90
V_RM
40
70
100
I_O
150
I_FRM
450
V_F
1
I_R1
1
I_R2
20
(Note 1) Ct
3
Reverse Recovery Time
(Note 2) trr
5
4
Thermal Resistance
(junction to ambient)
(Note 3) ^Rθ(ja)
0.35
Operating Junction and Storage Temperature Range
T_STG,T_J
-55 +175
Note
1. V_R=1V, f=1 MHz
2. I_F=10mA to I_R=10mA, Irr=1mA
3: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
V
V
mA
mA
V
µA
µA
pF
nS
o_C/mW
o_C
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