1N4933G Datasheet, PDF (1/1 Pages) Rectron Semiconductor – FAST RECOVERY GLASS PASSIVATED RECTIFIER

SHANGHAI SUNRISE ELECTRONICS CO., LTD.
1N4933G THRU 1N4937G
GLASS PASSIVATED
FAST RECOVERY RECTIFIER
VOLTAGE: 50 TO 600V CURRENT: 1.0A
TECHNICAL
SPECIFICATION
FEATURES
• Molded case feature for auto insertion
• Glass passivated chip
• Fast switching for high efficiency
• High current capability
• Low leakage current
• High surge capability
• High temperature soldering guaranteed:
250^oC/10sec/0.375"(9.5mm) lead length
at 5 lbs tension
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
• Mounting position: Any
DO - 41
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25^oC, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
SYMBOL
1N
4933G
1N
4934G
1N
4935G
1N
4936G
1N
4937G
UNITS
Maximum Repetitive Peak Reverse Voltage
V_RRM
50 100 200 400 600
V
Maximum RMS Voltage
V_RMS
35
70 140 280 420
V
Maximum DC Blocking Voltage
V_DC
50 100 200 400 600
V
Maximum Average Forward Rectified Current
(9.5mm lead length, at T_a=75^oC)
I_F(AV)
1.0
A
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
I_FSM
30.0
A
Maximum Forward Voltage
(at rated forward current and 25^oC)
V_F
1.2
V
Maximum DC Reverse Current
(at rated DC blocking voltage)
T_a=25^oC
T_a=100^oC
I_R
5.0
µA
100
µA
Maximum Reverse Recovery Time (Note 1)
trr
200
nS
Typical Junction Capacitance
(Note 2)
C_J
15.0
Typical Thermal Resistance
(Note 3) R_θ(ja)
50.0
Storage and Operation Junction Temperature T_STG,T_J
-65 to +150
Note:
1.Reverse recovery condition I_F=1.0A, V_R=30V
2.Measured at 1.0 MHz and applied voltage of 4.0V_dc
3.Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C. board mounted
pF
o_C/W
o_C
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