1N4001G Datasheet, PDF (1/1 Pages) NXP Semiconductors – Rectifiers(Rugged glass package, using a high temperature alloyed construction)

SHANGHAI SUNRISE ELECTRONICS CO., LTD.
1N4001G THRU 1N4007G
GLASS PASSIVATED
JUNCTION RECTIFIER
TECHNICAL
SPECIFICATION
VOLTAGE: 50 TO 1000V CURRENT: 1.0A
FEATURES
• Molded case feature for auto insertion
• Glass passivated chip
• High current capability
• Low leakage current
• High surge capability
• High temperature soldering guaranteed:
250^oC/10sec/0.375"(9.5mm) lead length
at 5 lbs tension
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
• Mounting position: Any
DO - 41
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25^oC, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
SYMBOL
1N40
01G
1N40
02G
1N40
03G
1N40
04G
1N40
05G
1N40
06G
1N40
07G
UNITS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(9.5mm lead length, at T_a=75^oC)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
1.0
A
30.0
A
Maximum Instantaneous Forward Voltage
V_F
(at rated forward current)
1.1
V
Maximum DC Reverse Current
(at rated DC blocking voltage)
T_a=25^oC
T_a=100^oC
I_R
5.0
µA
50
µA
Typical Junction Capacitance
(Note 1) C_J
15.0
pF
Typical Thermal Resistance
(Note 2) R_θ(ja)
Storage and Operation Junction Temperature T_STG,T_J
50.0
-65 to +150
o_C/W
o_C
Note:
1.Measured at 1.0 MHz and applied voltage of 4.0V_dc
2.Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C. board mounted
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