TR0005_15 Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – NPN TRANSISTOR

SFT6800
PRELIMINARY
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: [phone] * Fax: [phone]
ELECTRICAL CHARACTERISTICS
SYMBOL
MIN MAX UNITS
Collector-Emitter Breakdown Voltage
(I_C = 20mA_DC)
Collector-Base Breakdown Voltage
(I_C = 100uA_DC)
Emitter-Base Breakdown Voltage
(I_E = 20uA_DC)
Collector Cutoff Current
(V_CB = 400V_DC)
Collector Cutoff Current
(V_CE = 400V_DC, V_EB = 1.5V_DC)
Emitter Cutoff Current
(V_EB = 6V_DC)
DC Current Gain*
(V_CE = 5V_DC)
(I_C = 50mA_DC)
(I_C = 500mA_DC)
(I_C = 1.0A_DC)
Collector-Emitter Saturation Voltage*
(I_C = 500mA_DC, I_B = 50mA_DC)
Base-Emitter Saturation Voltage*
(I_C = 500mA_DC, I_B = 50mA_DC)
Current Gain Bandwidth Product
(I_C = 50mA_{DC ,} V_CE = 10V_DC, f = 20MHz)
Output Capacitance
(V_CB= 30V_{DC ,} I_E = 0A_DC, f = 2.0MHz)
Turn On Time
Turn Off Time
(V_CC = 330V_{DC ,} I_C = 500mA_DC,
I_B1 = I_B2 = 100mA_DC
R_B1 = R_B2 = 330S)
*Pulse Test: Pulse Width = 300us, Duty Cycle = 2%
BV_CEO
BV_CBO
BV_EBO
I_CBO
I_CEV
I_EBO
H_FE
V_CE(SAT)
V_{BE (SAT)}
fT
C_ob
t_(on)
t_(off)
400
-
V
500
-
V
10
-
V
-
200
nA
-
200
nA
-
200
nA
50
-
40
-
15
-
-
500
mV_DC
-
1.0
V_DC
25
-
MHz
-
40
pf
-
700
ns
-
2000
ns