SFT6800-59 Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – 2 AMP 500 VOLTS NPN TRANSISTOR

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
SFT6800/59
ELECTRICAL CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(I_C = 20 mA)
Collector – Base Breakdown Voltage
(I_C = 100 µA_DC)
Emitter – Base Breakdown Voltage
(I_E = 20 µA_DC)
Collector Cutoff Current
(V_CB = 400 V_DC)
Collector Cutoff Current
(V_CE = 400 V_DC, V_EB = 1.5 V_DC)
Emitter Cutoff Current
(V_EB = 6 V_DC)
DC Current Gain*
(V_CE = 5 V_DC)
Collector – Emitter Saturation Voltage*
(I_C = 500 mA_DC, I_B = 50 mA_DC)
Base – Emitter Saturation Voltage*
(I_C = 500 mA_DC, I_B = 50 mA_DC)
Current Gain Bandwidth Product
(I_C = 50 mA_DC, V_CE = 10 V_DC , f = 20 MHz)
Output Capacitance
(V_CB = 30 V_DC, I_E = 0 A_DC , f = 2.0 MHz)
Turn On Time
Turn Off Time
(V_CC = 330 V_DC, I_C = 500 mA_DC ,
I_B1 = I_B2 = 100 mA_DC
R_B1 = R_B2 = 330 Ω
* Pulse Test: Pulse Width = 300 µsec, Duty Cycle = 2%
Symbol
BV_CEO
BV_CBO
BV_EBO
I_CBO
I_CEV
(I_C = 50 mA_DC)
(I_C = 500 mA_DC)
(I_C = 1.0 A_DC)
I_EBO
H_FE
V_{CE (SAT)}
V_{BE (SAT)}
f_T
C_obo
t_(on)
t_(off)
Min Max Units
400
––
––
V
500 ––
V
10
––
V
–– 200 nA
–– 200 nA
–– 200 nA
50
––
40
––
15
––
––
500 mV_DC
––
1.0
V_DC
25
–– MHz
––
40
pf
–– 700 ns
–– 2000 ns
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0009E
DOC